Allicdata Part #: | APTGF90DU60TG-ND |
Manufacturer Part#: |
APTGF90DU60TG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT MODULE NPT DUAL SOURCE SP4 |
More Detail: | IGBT Module NPT Dual, Common Source 600V 110A 416W... |
DataSheet: | APTGF90DU60TG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | NPT |
Configuration: | Dual, Common Source |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 110A |
Power - Max: | 416W |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 90A |
Current - Collector Cutoff (Max): | 250µA |
Input Capacitance (Cies) @ Vce: | 4.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
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The APTGF90DU60TG is an Insulated Gate Bipolar Transistor (IGBT) module and is used in a variety of applications in power systems. The device is made of two isolated parts: an N-type field effect transistor (N-FET) and a P-type bipolar transistor (P-BT) which are connected in series. By employing an active control gate, the APTGF90DU60TG can be switched on and off rapidly while providing much higher current handling capacity and higher switching speeds than other bipolar transistor devices.
The device has the highest power rating in its class and its features make it a popular choice for high-power applications such as motor control, AC-DC and DC-DC converters, and switched mode power supplies (SMPS). The APTGF90DU60TG module also supports a variety of gate drive and current sensing possibilities with its multiple logic circuits available.
The APTGF90DU60TG module is composed of two components: an IGBT and an anti-parallel diode. The integrated IGBT consists of two active regions which are the N-channel, formed from the source and drain electrodes, and the P-channel formed from the gate and the collector. The gate electrode, also known as the control gate, is connected to the base, or emitter, of the diode component via a separate gate drive signal.
The APTGF90DU60TG module has two main operating modes. In the ON state, a potential difference is applied between the collector and the emitter of the IGBT component, which allows a majority of the current to flow from collector to emitter. In the OFF state, the potential difference is reversed, thus switching off the current flow.
In order to achieve efficient operation of the APTGF90DU60TG along with increased reliability, it is essential to use a suitable gate drive power supply. The gate drive signal is monitored for any over-current or temperature events, and the APTGF90DU60TG can be shut down before any potential damage is inflicted to the device. The module also employs protective circuitry which provides added protection against open-circuit and short-circuit fault conditions.
The APTGF90DU60TG module can also be used to construct switching circuits and power converter systems with multiple IGBTs and diodes. These systems are useful for controlling inductive loads and non-linear loads such as variable speed drives, power factor correction (PFC) systems, and pulse-width modulation (PWM) equipment. Additionally, the APTGF90DU60TG module can be used to build power systems for high-power applications such as supply network interfacing, electric traction systems, and transportation systems.
Overall, the APTGF90DU60TG is an integrated module which provides a cost-effective, high-performance solution for a wide range of applications requiring high efficiency switching of large currents. With its factory-fitted gate drive circuitry and protection against fault conditions, the module offers great reliability and flexibility in power systems design. With its integrated components and ability to be used in both single and multiple configurations, the APTGF90DU60TGis an ideal choice for high-power applications.
The specific data is subject to PDF, and the above content is for reference
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