Allicdata Part #: | APTGT25H120T1G-ND |
Manufacturer Part#: |
APTGT25H120T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT MOD TRENCH FULL BRIDGE SP1 |
More Detail: | IGBT Module Trench Field Stop Full Bridge Inverter... |
DataSheet: | APTGT25H120T1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | Trench Field Stop |
Configuration: | Full Bridge Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 40A |
Power - Max: | 156W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 25A |
Current - Collector Cutoff (Max): | 250µA |
Input Capacitance (Cies) @ Vce: | 1.8nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP1 |
Supplier Device Package: | SP1 |
Description
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APTGT25H120T1G Application Field and Working Principle
Introduction
APTGT25H120T1G is a new type of insulated gate bipolar transistor (IGBT) module developed by Advanced Power Technology Inc. It aims to provide higher performance and improved reliability for power conversion and motor control applications. In this article, we will discuss the application fields and working principle of APTGT25H120T1G module in detail.Application Field
APTGT25H120T1G modules are mainly used in power electronics applications such as motor control, inverters, and UPS systems. These systems require high power density, high efficiency, high switching frequency, and low losses. The APTGT25H120T1G is designed to provide improved performance in these applications.The APTGT25H120T1G module features a high-power IGBT that can handle up to 1200A at 600V. This enables it to be used in high-power applications such as motor control and inverter systems. It has an on-state resistance (Ron) of 0.82mOhm and a gate-charge value of 130nC, which enables it to switch at very high frequencies with low losses.In addition, the APTGT25H120T1G module features a built-in control circuit designed to limit the current, voltage, and power. This makes it suitable for use in sensitive applications such as UPS systems, where precise control is required.Working Principle
APTGT25H120T1G modules are based on the IGBT technology. IGBTs are a type of power semiconductor device that combines the control of a MOSFET and the switching speed of a thyristor.The APTGT25H120T1G module features a three-terminal switch (the gate, drain, and source) that controls the current flow. When a positive gate voltage is applied, the module is turned on, allowing current to flow through the drain and the source terminals. When the gate voltage is removed, the module turns off, and no current flows.The APTGT25H120T1G module also features a built-in temperature sensor, which helps protect the module from thermal damage. If the temperature gets too high, the module will shut off automatically to prevent further damage.Conclusion
In conclusion, the APTGT25H120T1G module is a highly reliable and efficient device that can be used in a variety of power electronics applications such as motor control and inverters. The module features an insulated gate bipolar transistor, an on-state resistance of 0.82mOhm, and a gate-charge value of 130nC. It also features a built-in control circuit and a temperature sensor. These features make the APTGT25H120T1G module a great choice for applications requiring high performance, reliability, and safety.The specific data is subject to PDF, and the above content is for reference
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