APTGT30A170D1G Allicdata Electronics
Allicdata Part #:

APTGT30A170D1G-ND

Manufacturer Part#:

APTGT30A170D1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT MODULE TRENCH PHASE LEG D1
More Detail: IGBT Module Trench Field Stop Half Bridge 1700V 45...
DataSheet: APTGT30A170D1G datasheetAPTGT30A170D1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Discontinued at Digi-Key
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 45A
Power - Max: 210W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Current - Collector Cutoff (Max): 3mA
Input Capacitance (Cies) @ Vce: 2.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: --
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
Description

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APTGT30A170D1G is an integrated gate bipolar transistor (IGBT) module designed for medium-power applications. Developed by Mitsubishi Electric, this device is one of their latest modules specifically made for power systems requiring high power efficiency and a fast response time. Its features include a low saturation voltage, reduced switching and conduction losses, an improved cooling system, and a low gate drive power rating.

Applications of APTGT30A170D1G

APTGT30A170D1G is a suitable device for motor control applications, servo drives, frequency converters, renewable energy systems, UPS systems, and other applications requiring various levels of power and speed. This device is often used in switching applications such as DC relays, AC relay circuits, IGBT in AC inverter circuits, and IGBTs in DC–DC converters. In particular, its low saturation voltage and low gate-drive power makes it suitable for ultra fast switching applications.

Working Principle of APTGT30A170D1G

APTGT30A170D1G is an IGBT module that works using the principle of the bipolar junction transistor, which is the combination of an N-type semiconductor and a P-type semiconductor. APTGT30A170D1G combines an IGBT base with two fast recovery power diodes in a three-terminal package. When a gate voltage is applied, the two power diodes start to conduct current and charge the IGBT gate capacitance unit, which then turns on the IGBT. When the gate voltage is removed, the IGBT turns off and the power diodes stop conducting current.

APTGT30A170D1G utilizes an advanced anti-parallel diodes system, which reduces the switch-on and switch-off loss needed to operate. This allows the IGBT to operate in high-speed switching range with low losses. In addition, the low gate-drive power rating along with its low saturation voltage, results in improved power density, minimal power losses, and efficient operation.

Summary

APTGT30A170D1G is an IGBT module developed by Mitsubishi Electric, using the traditional bipolar junction transistor principle. This module is suitable for power systems requiring high power efficiency, fast response time and minimal power-losses. As such, the features include a low saturation voltage, reduced switching and conduction losses, an improved cooling system, and a low gate-drive power rating. In addition, its application field includes motor control, servo drives, frequency converters, renewable energy systems, and UPS systems.

The specific data is subject to PDF, and the above content is for reference

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