APTGT30A60T1G Allicdata Electronics
Allicdata Part #:

APTGT30A60T1G-ND

Manufacturer Part#:

APTGT30A60T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT MODULE TRENCH PHASE LEG SP1
More Detail: IGBT Module Trench Field Stop Half Bridge 600V 50A...
DataSheet: APTGT30A60T1G datasheetAPTGT30A60T1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 50A
Power - Max: 90W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 1.6nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Description

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The APTGT30A60T1G is a member of a series of IGBT modules produced by ON Semiconductor. It has a rated current of 30A, a block voltage of 600V, and an isolation voltage of 2500V. The module has a maximum power dissipation of 4688W, a gate charge of 126nC, and a maximum current limit of 24A. Its switching frequency can reach up to 17kHz.

The applications of the APTGT30A60T1G module are wide-ranging and include motor drive, renewable energy storage, transformer welding machines, elevator inverters, and electric vehicle motors, among others. It is suitable for use in industrial applications, consumer electronics, and automotive systems.

The APTGT30A60T1G module consists of two insulated gate bipolar transistors (IGBTs) in a half-bridge configuration. An IGBT is a type of transistor which, unlike a traditional bipolar junction transistor (BJT), can be switched on and off by applying a voltage to the gate terminal. When a positive voltage is applied to the IGBT, electrons are attracted to the gate and create what is called an “inversion layer”, which allows current to flow through the device. This process is known as turn-on and it occurs relatively quickly compared to traditional BJTs.

When the voltage at the gate is reduced or removed, electrons are repelled away from the gate and the inversion layer is destroyed, causing the device to turn off. This process is known as turn-off and it generally occurs more slowly than turn-on. The APTGT30A60T1G module contains two IGBTs in a complimentary configuration which allows for both turn-on and turn-off processes to occur simultaneously.

The two IGBTs of the APTGT30A60T1G module can be used either individually or in combination. When used individually, the IGBT acts as an on-off switch for controlling the flow of current. When connected in combination, the two IGBTs act as a bidirectional switch which can control the direction of current flow. This is useful for applications such as motor drives which require current to flow in both directions.

The APTGT30A60T1G module is designed to provide reliable operation in adverse conditions with minimal difficulty. Its maximum power dissipation and current limit exceed most industrial requirements, while its isolation voltage protects against electromagnetic interference (EMI). Its low gate charge allows for rapid switching, which is ideal for applications such as motor drives which require frequent switching.

In summary, the APTGT30A60T1G module is a high-performance IGBT module suitable for use in a wide range of demanding applications. Its combination of low gate charge, high power dissipation, and isolation voltage make it an ideal choice for applications that require the rapid switching of high current in both directions.

The specific data is subject to PDF, and the above content is for reference

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