FQD7P20TM Discrete Semiconductor Products |
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Allicdata Part #: | FQD7P20TMTR-ND |
Manufacturer Part#: |
FQD7P20TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 200V 5.7A DPAK |
More Detail: | P-Channel 200V 5.7A (Tc) 2.5W (Ta), 55W (Tc) Surfa... |
DataSheet: | FQD7P20TM Datasheet/PDF |
Quantity: | 10000 |
Series: | QFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 5.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 690 mOhm @ 2.85A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 55W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The FQD7P20TM is a single N-Channel Field-Effect Transistor (FET) made from semiconductor material. The device is designed and manufactured to operate in the following application field: load switching and general purpose power control. It is ideal for power control applications in various industrial, automotive and consumer systems.
The FQD7P20TM is a depletion region-type FET, having an output current range of 1.8-9.0A and an output gate voltage range of -3V to -20V. It features an incredibly low gate-source threshold voltage, just as other depletion region-type FETs, allowing it to operate as a low-bias electronic switch. Additionally, it is designed with very low on-resistance, making it ideal for low-temperature applications. With a total gate charge of 11.7nC and a max Vds of 24V, the FQD7P20TM is both economical and efficient, making it a great option for various industrial, automotive, and consumer systems.
The FQD7P20TM’s working principle is based on the depletion region-based FET. In this type of device, a positive voltage applied to the gate terminal causes an electric field to form between the gate and the source, creating a depletion region. This region then depletes free carriers from the source region and forms a conductive path from the drain to the source. By applying various voltages and currents to the gate terminal, this depletion region can be adjusted and controlled, enabling the FQD7P20TM to be used as an efficient, low-power switch.
The FQD7P20TM is designed to be easily integrated into existing systems and can be used in a variety of situations. It features an incredibly low gate-source threshold voltage, making it an ideal choice for low-bias electronic switching applications in power control, load switching, and other related fields. Additionally, its incredibly low on-resistance makes it a great option for low-temperature applications, making the FQD7P20TM suited for a wide variety of applications.
Overall, the FQD7P20TM is a great choice for a low-power switch due to its low gate-source threshold voltage, low on-resistance, high power rating, and low cost. Its versatile design makes it a great choice for power control, load switching, and other applications in various industrial, automotive, and consumer systems. With its great versatility and efficiency, the FQD7P20TM can provide great value for many different applications.
The specific data is subject to PDF, and the above content is for reference
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