SP8K52FRATB Allicdata Electronics

SP8K52FRATB Discrete Semiconductor Products

Allicdata Part #:

SP8K52FRATBTR-ND

Manufacturer Part#:

SP8K52FRATB

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: 4V DRIVE NCH+NCH MOSFET
More Detail: Mosfet Array 2 N-Channel (Dual) 100V 3A (Ta) 2W Su...
DataSheet: SP8K52FRATB datasheetSP8K52FRATB Datasheet/PDF
Quantity: 2500
2500 +: $ 0.27082
Stock 2500Can Ship Immediately
$ 0.29
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 170 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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SP8K52FRATB Application Fields and Working Principles

The SP8K52FRATB, which merges the earlier SP8K51FRATB and the SP8K52, is an enhancement of a regular field-effect transistor (FET) array. It is a robust, low-power transistor array perfect for a variety of applications ranging from power supplies to switches and amplifiers.

The SP8K52FRATB sports eight transistors, each capable of carrying current up to 200mA. These transistors are arranged into an 8-channel FET array. Built following a complementary MOSFET technology, it features dual-gate N-channel Mosfet and a P-Channel Mosfet. The transistor array is designed to be able to withstand temperatures up to 150°C and mounting temperatures up to 200°C. It comes in a small, 16-Lead SSOP package.

Since the SP8K52FRATB is an "enhancement" of a regular FET array, it allows for greater efficiency and speed. It could be used in various low-power applications, such as FLASH MCUs, gate drivers and protection circuits. To ensure stability in performance, the SP8K52FRATB includes protection circuitry against over-voltage and over-current. It also comes with low-voltage and lower-current protection. Moreover, it works optimally at a 3-volt power supply.

Working Principle

The SP8K52FRATB works very similarly to traditional MOSFET, since it is built in the same complementary MOSFET technology. Essentially, it contains both an n-type and a p-type MOSFET. When positive voltage is applied to the gate of the n-type (draining) MOSFET, this allows for current to flow through the channel. This then switches on the transistors and allows for low-power operation. Conversely, when a negative voltage is applied to the p-type (draining) MOSFET, the current is blocked and the transistors switch off.

The SP8K52FRATB also allows for high-frequency switching, thanks to its wide bandwidth of 17kHz at 4.5volts, and a transient frequency of 10MHz at 10volts. This makes it a perfect choice for applications such as switching power converters, low-power circuit protection, high-efficiency motor drivers, or any other high-frequency switching tasks.

The dual-gate MOSFET also provides added protection from ESD, since the gates of both MOSFETs are connected to the same terminal. This way, voltage is dissipated more effectively away from the contact points of the device, preventing dangerous spikes.

Conclusion

The SP8K52FRATB is a robust, low-power transistor array with eight transistors, perfect for numerous applications. It works on the same principle as a traditional MOSFET, which is to apply positive voltage to turn on the transistors and negative voltage to turn them off. Additionally, it provides ESD protection due to its dual-gate MOSFET construction. Because of its wide bandwidth and low-power operation, it is perfect for power supplies, switches, amplifiers, and high-frequency switching tasks.

The specific data is subject to PDF, and the above content is for reference

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