SP8K3TB Allicdata Electronics

SP8K3TB Discrete Semiconductor Products

Allicdata Part #:

SP8K3TBTR-ND

Manufacturer Part#:

SP8K3TB

Price: $ 0.43
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET 2N-CH 30V 7A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 7A 2W Surface ...
DataSheet: SP8K3TB datasheetSP8K3TB Datasheet/PDF
Quantity: 7500
2500 +: $ 0.39051
Stock 7500Can Ship Immediately
$ 0.43
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Base Part Number: *K3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SP8K3TB is a field-gate array transistor that operates as both a Field-Effect Transistor (FET) and a Metal-Oxide-Semiconductor FET (MOSFET). The transistor is an interesting design because of its versatility. This type of transistor makes use of both N- and P- type carriers and gate-oxide fabrication to create an inherently high breakdown voltage and temperature-stabilized avalanche characteristics.

In the typical arrangement of this type of transistor, the P-type carriers are released in the Drain region, while the N-type carriers are released in the Source region. The Gate Region is set between the Source and Drain and provides an insulated barrier in which the electrons can be manipulated to control the transistor’s on/off state. The P-type carriers in the Drain region will act as a buffer and attract more electrons, while the N-type carriers in the Source region provide the electrical field needed to manipulate the electrons.

The SP8K3TB is designed to provide high-frequency switching performance, with low power consumption. This is accomplished by the use of an array of high-speed switching transistors in the Source and Drain regions. The use of an array of transistors allows for the increased high-frequency performance without the need to increase power consumption.

In addition, the SP8K3TB includes a dual zener diode configuration to provide extra voltage protection. This prevents the transistors from being damaged by a large surge of power. The diode also has active over voltage protection, which prevents the device from being damaged due to excessive voltage.

The SP8K3TB also includes a number of protection features, such as over temperature protection, under voltage protection, and over voltage protection. All these features provide the device with a high degree of protection from unwanted power surges. In addition, the diode provides extra protection against electro-static discharge, helping to ensure maximum reliability.

Overall, the SP8K3TB is a highly versatile and reliable transistor. It is suitable for use in a wide range of applications, including power management, logic circuits, switching, and audio amplifiers. Due to its robust protection features, it is also well-suited for use in automotive and industrial applications. The combination of its versatility, low power consumption, and reliability makes the SP8K3TB a great choice for any application requiring reliable high-frequency switching.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SP8K" Included word is 19
Part Number Manufacturer Price Quantity Description
SP8K1TB ROHM Semicon... -- 1000 MOSFET 2N-CH 30V 5A 8-SOI...
SP8K4TB ROHM Semicon... -- 1000 MOSFET 2N-CH 30V 9A 8-SOI...
SP8K5TB ROHM Semicon... 0.0 $ 1000 MOSFET 2N-CH 30V 3.5A 8-S...
SP8K31TB1 ROHM Semicon... -- 1000 MOSFET 2N-CH 60V 3.5A 8SO...
SP8K2FU6TB ROHM Semicon... 0.44 $ 1000 MOSFET 2N-CH 30V 6A 8SOIC...
SP8K22FU6TB ROHM Semicon... 0.46 $ 1000 MOSFET 2N-CH 45V 4.5A 8SO...
SP8K3FU6TB ROHM Semicon... 0.48 $ 1000 MOSFET 2N-CH 30V 7A 8SOIC...
SP8K4FU6TB ROHM Semicon... -- 1000 MOSFET 2N-CH 30V 9A 8SOIC...
SP8K24FU6TB ROHM Semicon... 0.7 $ 1000 MOSFET 2N-CH 45V 6A 8SOIC...
SP8K5FU6TB ROHM Semicon... 0.29 $ 1000 MOSFET 2N-CH 30V 3.5A 8SO...
SP8K1FU6TB ROHM Semicon... 0.35 $ 1000 MOSFET 2N-CH 30V 5A 8SOIC...
SP8K2TB ROHM Semicon... -- 70000 MOSFET 2N-CH 30V 6A 8-SOI...
SP8K52FRATB ROHM Semicon... 0.29 $ 2500 4V DRIVE NCH+NCH MOSFETMo...
SP8K33FRATB ROHM Semicon... 0.33 $ 2500 4V DRIVE NCH+NCH MOSFET (...
SP8K24FRATB ROHM Semicon... 0.41 $ 2500 4V DRIVE NCH+NCH MOSFET (...
SP8K32FRATB ROHM Semicon... 0.5 $ 2500 4V DRIVE NCH+NCH MOSFET (...
SP8K3TB ROHM Semicon... 0.43 $ 7500 MOSFET 2N-CH 30V 7A 8-SOI...
SP8K31FRATB ROHM Semicon... 0.2 $ 1000 4V DRIVE NCH+NCH MOSFET (...
SP8K22FRATB ROHM Semicon... 0.55 $ 1000 4V DRIVE NCH+NCH MOSFET (...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics