SP8K3TB Discrete Semiconductor Products |
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Allicdata Part #: | SP8K3TBTR-ND |
Manufacturer Part#: |
SP8K3TB |
Price: | $ 0.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET 2N-CH 30V 7A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 7A 2W Surface ... |
DataSheet: | SP8K3TB Datasheet/PDF |
Quantity: | 7500 |
2500 +: | $ 0.39051 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 7A |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 11.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 10V |
Power - Max: | 2W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
Base Part Number: | *K3 |
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The SP8K3TB is a field-gate array transistor that operates as both a Field-Effect Transistor (FET) and a Metal-Oxide-Semiconductor FET (MOSFET). The transistor is an interesting design because of its versatility. This type of transistor makes use of both N- and P- type carriers and gate-oxide fabrication to create an inherently high breakdown voltage and temperature-stabilized avalanche characteristics.
In the typical arrangement of this type of transistor, the P-type carriers are released in the Drain region, while the N-type carriers are released in the Source region. The Gate Region is set between the Source and Drain and provides an insulated barrier in which the electrons can be manipulated to control the transistor’s on/off state. The P-type carriers in the Drain region will act as a buffer and attract more electrons, while the N-type carriers in the Source region provide the electrical field needed to manipulate the electrons.
The SP8K3TB is designed to provide high-frequency switching performance, with low power consumption. This is accomplished by the use of an array of high-speed switching transistors in the Source and Drain regions. The use of an array of transistors allows for the increased high-frequency performance without the need to increase power consumption.
In addition, the SP8K3TB includes a dual zener diode configuration to provide extra voltage protection. This prevents the transistors from being damaged by a large surge of power. The diode also has active over voltage protection, which prevents the device from being damaged due to excessive voltage.
The SP8K3TB also includes a number of protection features, such as over temperature protection, under voltage protection, and over voltage protection. All these features provide the device with a high degree of protection from unwanted power surges. In addition, the diode provides extra protection against electro-static discharge, helping to ensure maximum reliability.
Overall, the SP8K3TB is a highly versatile and reliable transistor. It is suitable for use in a wide range of applications, including power management, logic circuits, switching, and audio amplifiers. Due to its robust protection features, it is also well-suited for use in automotive and industrial applications. The combination of its versatility, low power consumption, and reliability makes the SP8K3TB a great choice for any application requiring reliable high-frequency switching.
The specific data is subject to PDF, and the above content is for reference
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