BF1102,115 Discrete Semiconductor Products |
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Allicdata Part #: | 568-6143-2-ND |
Manufacturer Part#: |
BF1102,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 7V 800MHZ 6TSSOP |
More Detail: | RF Mosfet N-Channel Dual Gate 5V 15mA 800MHz 6-T... |
DataSheet: | BF1102,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 800MHz |
Gain: | -- |
Voltage - Test: | 5V |
Current Rating: | 40mA |
Noise Figure: | 2dB |
Current - Test: | 15mA |
Power - Output: | -- |
Voltage - Rated: | 7V |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | 6-TSSOP |
Base Part Number: | BF1102 |
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The BF1102,115 FET is a transistors used in the field of radio frequency (RF) transmission. The main purpose of this FET is to help improve the amplification of signals. It has a wide dynamic range and is capable of supporting high RF powers with low noise coefficient. The BF1102,115 FET can be used for applications such as antenna and cable amplifiers, mixers, oscillators, receivers and transmitters.
A Field Effect Transistor (FET) is a type of transistor used for amplifying and switching signals. FETs are composed of two different elements, a source electrode and a gate electrode. The source electrode is connected to a voltage or current source, while the gate controls the current flow between the drain and source. FETs are available in a number of different configurations and sizes. The BF1102,115 FET is a metal oxide semiconductor field effect transistor (MOSFET), which is a type of FET that utilizes a gate oxide layer between the source and drain.
The BF1102,115 FET operates on the principle of field effect. When a voltage is applied to the gate, it forms an electric field. This electric field changes the conductivity of the channel between the source and drain, allowing current to flow through the transistor. This process is known as enhancement mode. The amplifier gain of the FET is determined by the ratio of the drain current to the gate current.
The BF1102,115 FET provides excellent radio frequency performance due to its low noise figure and high gain. It is capable of supporting high RF powers with low noise coefficient. It also has a wide dynamic range, making it suitable for a variety of applications.
The BF1102,115 FET can be used for a wide range of RF applications such as antenna and cable amplifiers, mixers, oscillators, receivers and transmitters. It can be used for wireless communications such as cell phones, Bluetooth, and Wi-Fi. It can also be used for medical, industrial and automotive applications.
In conclusion, the BF1102,115 FET is an excellent choice for RF applications due to its wide dynamic range and high gain. It is capable of supporting high RF powers with low noise coefficient. It has a wide range of applications in different industries such as wireless communications, medical, industrial and automotive.
The specific data is subject to PDF, and the above content is for reference
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