BF1100R,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-6138-2-ND |
Manufacturer Part#: |
BF1100R,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 14V 30MA SOT143 |
More Detail: | RF Mosfet N-Channel Dual Gate 9V 10mA 800MHz SOT... |
DataSheet: | BF1100R,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 800MHz |
Gain: | -- |
Voltage - Test: | 9V |
Current Rating: | 30mA |
Noise Figure: | 2dB |
Current - Test: | 10mA |
Power - Output: | -- |
Voltage - Rated: | 14V |
Package / Case: | SOT-143R |
Supplier Device Package: | SOT-143R |
Base Part Number: | BF1100 |
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BF1100R,215 Application Field and Working Principle
The BF1100R,215 is a series of metal-oxide semiconductor field-effect transistors (MOSFETs) designed for use in vertical and lateral radio frequency (RF) applications. This series operates at a maximum drain-source voltage of 250 volts of continuous current leakage and a peak pulsed oscillation of up to 1.5 amps in addition to a low on-resistance of 0.01Ω.
Application Field
This series is especially suited for high frequency vertical and lateral switching applications in power amplifiers, IF amplifiers, and switching regulators, where parasitic capacitance and series inductance need to be minimized. This series is frequently used in energy-saving motor control applications, automotive electronic control units, plasma display panels and air conditioner inverters.
Working Principle
The BF1100R,215 series of MOSFETs are designed to handle frequencies from 400MHz to 1GHz, since field-effect transistors are more efficient in high frequency scenarios due to their higher switching speeds. The drain-source connection of MOSFETs build a capacitance between the gate-drain and gate-source nodes, creating a type of resonant circuit which in this case, is extremely useful in boosting the high-frequency response. The internal drain-to-source capacitance of these transistors can be leveraged to reduce the circuit\'s total parasitic capacitance and increase the device’s effective resistance.
The RF device also features a high power to heat dissipation ratio, where power is dissipated by the transistor’s resistance, due to the series drain-source leakage. This means that the device dissipates less power for the same amount of current than most other MOSFETs. Additionally, the BF1100R,215 series has a lower threshold voltage and source-drain breakdown current than normal, meaning it is less likely to switch on or off fully when it is not intended to. This reduces any potential switching noise and contributes to better system reliability.
Conclusion
The BF1100R,215 series of MOSFETs have been designed to handle a wide range of frequencies and voltage levels, and are perfect for a range of high frequency switching applications in power amplifiers, IF amplifiers, and switching regulators. Its unique features like reduced parasitic capacitance and low on-resistance make it a great choice for applications that require high frequency switching and reduced switching noise.
The specific data is subject to PDF, and the above content is for reference
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