Allicdata Part #: | BF1100R,235-ND |
Manufacturer Part#: |
BF1100R,235 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 14V 30MA SOT143 |
More Detail: | RF Mosfet N-Channel Dual Gate 9V 10mA 800MHz SOT... |
DataSheet: | BF1100R,235 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 800MHz |
Gain: | -- |
Voltage - Test: | 9V |
Current Rating: | 30mA |
Noise Figure: | 2dB |
Current - Test: | 10mA |
Power - Output: | -- |
Voltage - Rated: | 14V |
Package / Case: | SOT-143R |
Supplier Device Package: | SOT-143R |
Base Part Number: | BF1100 |
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BF1100R,235 is one of the most important types of transistors used in RF applications. It is a FET (Field Effect Transistor) and is capable of handling high frequencies and high power ratings. It is an N-Type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that uses a vertical silicon gate structure and has a maximum voltage rating of 12 volts.
The BF1100R,235 is primarily used in radio frequency applications, where a high frequency, high power rating and low level of noise is required. This type of transistor is also ideal for applications involving the radiation of RF energy, such as antennas, amplifiers and power supplies. The transistor can also be used in switching and control applications.
The working principle of the BF1100R,235 is relatively simple, although it is capable of handling high frequencies and high power ratings. Basically, the transistor works by amplifying the input signal and controlling the flow of current from the source to the drain. This is done by using a Gate voltage to control the amount of current that is allowed to flow through the transistor, as well as the voltage across the transistor.
The Gate voltage is controlled by the Gate terminal. When a negative voltage is applied to this terminal, the current flow is reduced, whereas when a positive voltage is applied, the current flow is increased. This makes the transistor ideal for controlling the power output of the circuit, as the Gate voltage can be adjusted to achieve the desired current flow.
BF1100R,235 transistors are used in a wide variety of applications. They can be used in radio frequency amplifiers, high power switching circuits, power supplies, and high frequency communication systems. They are also used in RF and microwave applications, as they are capable of handling high frequencies, high power ratings and low levels of noise. Additionally, the transistors are used in other miscellaneous applications, such as automotive and industrial applications, where the need for high frequency control is desired.
In conclusion, the BF1100R,235 is a FET that is used in a wide variety of radio frequency applications. It has a maximum voltage rating of 12 volts, and can handle high frequencies and high power ratings. It works by using a Gate voltage to control the amount of current that is allowed to flow through the transistor, as well as the voltage across the transistor. The BF1100R,235 is an ideal transistor for high frequency applications and is used in radio frequency amplifiers, high power switching circuits, power supplies, and high frequency communication systems.
The specific data is subject to PDF, and the above content is for reference
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