Allicdata Part #: | 568-1958-2-ND |
Manufacturer Part#: |
BF1108R,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | IC RF SWITCH SOT-143R |
More Detail: | RF Mosfet N-Channel SOT-143R |
DataSheet: | BF1108R,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel |
Frequency: | -- |
Gain: | -- |
Current Rating: | 10mA |
Noise Figure: | -- |
Power - Output: | -- |
Voltage - Rated: | 3V |
Package / Case: | SOT-143R |
Supplier Device Package: | SOT-143R |
Base Part Number: | BF1108 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BF1108R,215 is a field-effect transistor (FET) with a low noise figure and low power consumption. It works using the principle of an insulated-gate field-effect transistor (IGFET) or metal-oxide-semiconductor field-effect transistor (MOSFET). In essence, an IGFET or MOSFET is a type of transistor which is composed of a source, gate and drain. The current in a FET is controlled by the amount of electric field applied to the transistor\'s gate. The source of electron flow is generated in the source and the drain of the FET collects the electrons. By applying a voltage between the gate and the source, an electric field is generated between them which in turn changes the current flow through the FET.
Due to its low noise figure and low power consumption, BF1108R,215 is especially suitable for applications such as radio frequency (RF) amplifiers and oscillators, which require extremely low noise figures. This transistor uses a high-conductivity oxide-nitride-oxide (ONO) structure which provides high-speed operation, low on-state drain-source resistance (RDS) and high-transconductance. The high-conductivity of this transistor makes it ideal for RF applications.
In RF applications, the noise figure of a given component is a measure of its ability to amplify noise and distort the original signal. The lower the noise figure, the better the component is at keeping the original signal intact. Additionally, the low power consumption of BF1108R,215 makes it ideal for applications in which power efficiency is paramount. This transistor is also well suited to high-speed switching applications as it has a very fast switching speed.
Due to its low noise figure and low-power consumption, BF1108R,215 is widely used in RF communication systems and RF circuits such as wireless transmitter/receivers, terrestrial base stations, base station repeaters, and even GPS systems. In addition, this transistor is also used in the design of radio receivers, amplifiers and synthesizers. Overall, the BF1108R,215 is an ideal choice for RF applications that require a low-noise, high-performance field-effect transistor.
The specific data is subject to PDF, and the above content is for reference
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