Allicdata Part #: | FDPF33N25T-ND |
Manufacturer Part#: |
FDPF33N25T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 250V 33A TO-220F |
More Detail: | N-Channel 250V 33A (Tc) 37W (Tc) Through Hole TO-2... |
DataSheet: | FDPF33N25T Datasheet/PDF |
Quantity: | 3955 |
Series: | UniFET™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 94 mOhm @ 16.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 2135pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 37W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
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The FDPF33N25T postfix stands for P-Channel MOSFET, which is a type of transistor used in modern electronics. This particular model of FET (Field Effect Transistor) is part of a family called the Infinite V family that are specifically designed for high power operations. A power FET is a transistor used to transfer power from one circuit to another, instead of current as is done with a BJT (Bipolar JunctionTransistor).
The FDPF33N25T transistor has many useful applications in the field of power electronics. It has been used in a wide array of projects, from automotive to industrial, from medical to consumer. It can be used to provide switching power control in any power related application such as high-speed motor control, inverter circuits, and solar panels. In addition to its power control features, it can also be used to reduce the power consumption of a system. The FDPF33N25T is an exceptionally efficient transistor, with a typical power dissipation of only 8 mW when fully switched on, and less than a 10 μA leakage when off.
The working principle behind the FDPF33N25T is based on MOSFET (Metal-Oxide-Semiconductor FET) technology. A MOSFET is a type of FET that uses a very thin layer of an insulating material (the ‘oxide’ layer) in between the semiconductor material and the metal gate. This arrangement leaves an extremely small gap between the gate and the semiconductor material, allowing for electrical current to flow through with minimal resistance, and creating an ‘on’ or ‘off’ state when the gate is triggered. The FDPF33N25T can operate from as low as -0.5V up to +25V. It has an on resistance level of as low as 4.5Ω and can provide up to 10A of continuous current.
The FDPF33N25T can be used in a variety of applications. As mentioned previously, it can be used to provide switching power control, as well as provide a very efficient method of power control. It can also be used in applications such as motor control, as well as providing signal conditioning and signal isolation in analog circuits. In addition to these, the FDPF33N25T can also be used in a variety of other applications such as lighting controllers, motor drives, solar controller and PID (Proportional Integral Derivative Controller) circuits.
In summary, the FDPF33N25T is an excellent power FET transistor for high power operations, due to its very low dissipation and low leakage current. In addition to its efficiency, it has many useful applications in the field of power electronics from automotive to industrial, from medical to consumer. It can also be used for switching power control, motor control, signal conditioning and signal isolation in addition to other applications. The FDPF33N25T is an incredibly useful device for any embedded system.
The specific data is subject to PDF, and the above content is for reference
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