MMBT5087LT1G Allicdata Electronics

MMBT5087LT1G Discrete Semiconductor Products

Allicdata Part #:

MMBT5087LT1GOSTR-ND

Manufacturer Part#:

MMBT5087LT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 50V 0.05A SOT23
More Detail: Bipolar (BJT) Transistor PNP 50V 50mA 40MHz 300mW ...
DataSheet: MMBT5087LT1G datasheetMMBT5087LT1G Datasheet/PDF
Quantity: 69000
Stock 69000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Power - Max: 300mW
Frequency - Transition: 40MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBT5087
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MMBT5087LT1G is a kind of bipolar junction transistors (BJT) with high power and high speed switching characteristics, which makes them ideal for applications in products such as mobile phones and notebooks. It is the first product of the company which combines a high-power, high-speed transistor with a low-voltage feature for improved system flexibility. The MMBT5087LT1G transistors are also suitable for RF switching and signal amplification.

MMBT5087LT1G is a PNP transistor with an applications field ranging from a variety of switching circuits to light emitting diode (LED) drivers and general digital amplification. Its main features are its high speed switching, high power handling and low on-resistance. It is also used for applications that require low power consumption, such as battery powered devices. The device can be used both as a switch and amplifier. Furthermore, the device is designed to work over wide operating temperature range and is also low noise and radiation tolerant.

The working principle of the MMBT5087LT1G is as follows. It is a type of conventional four-layer PNP power transistor, with an emitter-base junction, a collector-base junction and two base control connections. The collector current passes through the collector-base junction, which is reverse-biased, thus controlling the collector current. When the base-emitter junction is forward biased, the base collector current is increased, destabilizing the collector current and ultimately allowing the transistor to switch its collector current. The transistor can be switched from its conducting "on" state to its non-conducting "off" state through the process of base current control.

The MMBT5087LT1G is a great choice for both high power applications and low power applications in electronic products. Its properties such as high power and speed, low on-resistance, wide operating temperature range and low power consumption make it a versatile device for various applications. This device is also highly suitable for RF switching and signal amplification, LED drivers, and more.

The specific data is subject to PDF, and the above content is for reference

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