MMBTA92LT1G Discrete Semiconductor Products

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The MMBTA92LT1G is a high speed, low noise enhancement mode field-effect transistor (HLNFET) designed to operate in the high power, high frequency range. It features an integrated source-gate structure with three-terminal voltage control, an industry-standard npn structure, and a low-resistance package which makes it ideal for a variety of high-reliability applications.

MMBTA92LT1G applications include high-frequency RF and microwave power amplification, switching circuits, communication systems, high-temperature control systems, and high impedance interfaces. Its working principle involves the modulation of the electric current through the gate terminal. The applied voltage at the gate terminal modulates the drain electric current, which eventually modulates the voltage across the drain and source terminals.

MMBTA92LT1G is designed to operate at power levels up to twice that of a standard bipolar transistor, as well as at much lower noise levels. It features an integrated source-gate structure with three-terminal voltage control, allowing for easy adjustment of the gain and load impedance by the user. Its small footprint also makes it suitable for applications that require a compact design. Its low-resistance package adds to its versatility and offers protection from high input power levels.

The superior performance of the MMBTA92LT1G make it suitable for high-reliability applications such as radio-frequency communications systems, high-frequency switching applications, power amplifiers, and other high-voltage and high-current applications. It has also been used in radar and testing equipment, as well as in medical equipment, due to its superior speed, low noise, and high power levels.

The MMBTA92LT1G is a high performance, low noise HLNFET that provides excellent performance in a variety of applications. It offers an ideal combination of low noise, high power, and high frequency performance that makes it an excellent choice for high-reliability applications that require superior performance. Its integrated source-gate structure with three-terminal voltage control gives the user precise control over the gain and load impedance, while the low-resistance package ensures reliable operation in harsh environments.

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