FJN4302RTA Discrete Semiconductor Products |
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Allicdata Part #: | FJN4302RTATB-ND |
Manufacturer Part#: |
FJN4302RTA |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 300MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | FJN4302RTA Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.02572 |
6000 +: | $ 0.02236 |
10000 +: | $ 0.01901 |
50000 +: | $ 0.01677 |
100000 +: | $ 0.01491 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | FJN4302 |
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The FJN4302RTA is a silicon NPN, pre-biased, single transistor, which is used in a wide variety of applications ranging from signal processing to high-voltage switching.
The FJN4302RTA features a high current carrying capacity of 6A peak and a low voltage drop of 1V. It has an excellent ESD protection of up to 8kV and is capable of operating at temperatures up to 175℃. The FJN4302RTA is also small in size and low on power consumption, making it an ideal choice for high performance and low power applications.
The FJN4302RTA is typically used as an amplifier or switch in applications such as motorcontrol, audio, power control, and power supply for consumer, professional and industrial electronics. Its high-speed switching capability makes it suitable for use in high frequency applications such as RF amplifiers and LED drivers.
The working principle of the FJN4302RTA is very straightforward. As its name implies, it is a pre-biased transistor, which means it already has a potential difference between its collector and base terminals. This potential difference is generated by an external biasing circuit, which is responsible for controlling the current flow through the transistor.
Once the transistor is biased, current starts to flow from the collector to the emitter. When a small input signal is applied to the base, the current flow is modulated, thus producing an amplified output signal. This amplified output is then used for various applications. The FJN4302RTA can either be used in an amplifier circuit or as a switch in whatever application is required.
The FJN4302RTA is designed to provide reliable performance in various applications, ranging from low-power audio amplifiers to high voltage and high frequency power supply and DC-DC conversion circuits. Its pre-biased design also makes it an ideal choice for applications in which low power consumption, high speed, and high reliability are paramount.
In addition to its excellent performance characteristics, the FJN4302RTA is highly cost effective and is available in a range of package sizes, making it the ideal choice for applications that require high reliability and performance at low cost.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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FJN4301RTA | ON Semicondu... | 0.03 $ | 2000 | TRANS PREBIAS PNP 300MW T... |
FJN4305RTA | ON Semicondu... | 0.03 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4309RTA | ON Semicondu... | 0.03 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4302RTA | ON Semicondu... | 0.03 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4314RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4309RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4310RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4302RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4312RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4311RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4311RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4313RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4312RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4314RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4308RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4307RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4308RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4310RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4313RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4306RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4304RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4303RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4307RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4306RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4305RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4301RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
FJN4304RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 300MW T... |
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