DTC143ZCAT116 Discrete Semiconductor Products |
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Allicdata Part #: | DTC143ZCAT116TR-ND |
Manufacturer Part#: |
DTC143ZCAT116 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NPN 100MA 50V DIGITAL TRANSISTOR |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC143ZCAT116 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02749 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
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The DTC143ZCAT116 is a medium-power vertical NPN silicon epitaxial transistor. It is classified as a Bipolar Junction Transistor (BJT) of the single and pre-biased type, designed for use in audio amplifying and other general purpose applications. It is has been specifically designed for use in automotive applications with its impressive Power Dissipation ratings.
The construction of the DTC143ZCAT116 comprises a vertical NPN silicon epitaxial structure located inside a molded plastic package among various other features. It contains three layers of electrodes; the base composed of silicone and two contact layers that are connected using the three pins. It is also pre-biased meaning that a minimum base-emitter voltage of 1.2V is applied to the transistor when using it, allowing for a quicker start for the transfers.
The DTC143ZCAT116 is extremely versatile and can handle a wide variety of external conditions and temperatures, balancing electrical and mechanical properties. It has also been designed for extremely low noise amplification with a low harmonic distortion, ideal for audio amplifying applications. Furthermore, its collector-emitter break-down voltage is of 40V and its collector-base break-down voltage is of 60V meaning that it is ideal for high-power, high-frequency applications.
The working principle behind the DTC143ZCAT116 is based on the idea of transfer of electrons between the base and collector terminals, which is dependent on the base-emitter voltage. When the base-emitter voltage is applied, electrons move through the emitter-base junction and into the base layer. This in turn causes the thin base region to act like a control grid for electrons in the collector region, which enables the transistor to amplify or switch signals.
Because the DTC143ZCAT116 is a medium-power BJT, it can be used for a range of applications such as signal amplifying, switching, and as a current regulator in high-power applications. It is also suitable for dc and low frequency ac circuit applications such as rectification and amplifier circuits. It is ideal for automotive applications for its impressive power dissipation ratings.
In conclusion, the DTC143ZCAT116 is a medium-power vertical NPN silicon epitaxial transistor designed for use in audio amplification and other general purpose applications. It is classified as a single and pre-biased Bipolar Junction Transistor (BJT) and has been specifically designed for use in automotive applications due to its impressive power dissipation ratings. It is extremely versatile and well suited for dc and low frequency ac circuit applications, signal amplifying, switching, and as a current regulator in high-power applications.
The specific data is subject to PDF, and the above content is for reference
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