BSH105,215

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	1.05A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	200 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:	570mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	3.9nC @ 4.5V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	152pF @ 16V
FET Feature:	--
Power Dissipation (Max):	417mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-236AB (SOT23)
Package / Case:	TO-236-3, SC-59, SOT-23-3

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BSH105,215 Application Field and Working Principle

BSH105 and BSH215 are two transistors in the same family of products that are used for a wide range of applications. They are both small-signal N-channel MOSFETs with an integrated body diode and are designed to provide small- and large-signal modulation. In this article, we will explore their application field, their working principle, and the advantages they offer.

Application Field

BSH105 and BSH215 are mainly used in digital switching, gate driving, and analog modulation applications. Due to their small size, they are ideal for use in compact portable devices such as cell phones and PDAs. They can also be used in industrial applications, including power electronics, lighting, and motor control.

Working Principle

The basic structure of a BSH105/215 consists of source and drain, gate, and body. When a voltage is applied to the gate, a current flows from the source to the drain and is proportional to the gate voltage. The body is connected to the drain and can be used to control the threshold voltage of the device.The threshold voltage can be used to change the amount of current flowing between the source and drain. The current is controlled by changing the voltage on the body. When the body voltage is increased, it creates a stronger electric field in the channel, which allows more current to flow. When the body voltage is decreased, the electric field is weakened, which reduces the current flow.In addition to controlling the current flow between the source and drain, the body voltage can also control the turn-on and turn-off speeds of the device. The turn-on and turn-off speed of the device depends on the amount of current flowing through the channel. If the body voltage is higher, the current flow is higher and the device will turn on faster. If the body voltage is lower, the current flow is lower and the device will turn off slower.

Advantages

BSH105 and BSH215 offer several advantages over other transistors, including low on-resistance, low power consumption, high switching speed, and low gate charge.The low on-resistance of the BSH105 and BSH215 allows them to handle higher current than other transistors. This makes them ideal for use in applications that require high current.The low power consumption of BSH105 and BSH215 allows them to operate efficiently with low supply voltages. This makes them ideal for use in applications where power consumption is a major concern.The high switching speed of BSH105 and BSH215 allows them to switch on and off quickly. This makes them ideal for use in applications where high-frequency switching is needed.The low gate charge of BSH105 and BSH215 makes them ideal for use in low-voltage applications. This means that they can be used in applications where space and power are limited.

Conclusion

BSH105 and BSH215 are small-signal N-channel MOSFETs with an integrated body diode that are designed for a wide range of applications. They offer several advantages, including low on-resistance, low power consumption, high switching speed, and low gate charge. These features make BSH105 and BSH215 ideal for use in applications where small size, power efficiency, and switching speed are required.

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