| Allicdata Part #: | HFA3096BZ-ND |
| Manufacturer Part#: |
HFA3096BZ |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America Inc. |
| Short Description: | IC TRANSISTOR ARRAY UHF 16-SOIC |
| More Detail: | RF Transistor 3 NPN + 2 PNP 12V, 15V 65mA 8GHz, 5.... |
| DataSheet: |  HFA3096BZ Datasheet/PDF |
| Quantity: | 1720 |
Specifications
| Series: | -- |
| Packaging: | -- |
| Part Status: | Active |
| Transistor Type: | 3 NPN + 2 PNP |
| Voltage - Collector Emitter Breakdown (Max): | 12V, 15V |
| Frequency - Transition: | 8GHz, 5.5GHz |
| Noise Figure (dB Typ @ f): | 3.5dB @ 1GHz |
| Gain: | -- |
| Power - Max: | 150mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 10mA, 2V / 20 @ 10mA, 2V |
| Current - Collector (Ic) (Max): | 65mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 16-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 16-SOIC |
| Base Part Number: | HFA3096 |
Description
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The HFA3096BZ transistor is a high-frequency, two-stage, medium-power transistor used in various RF applications. It is classified as a bipolar junction transistor, commonly known as a BJT, and it is well-suited for radio frequency applications, such as radio and TV receivers, TV transmitters and FM transmitters. A bipolar junction transistor, or BJT, consists of three terminals, an emitter, a base and a collector. This transistor works as a controlled switch, made up of n-P and p-N type semiconductor materials. The current flow through the BJT is determined by the current flowing between the base and the emitter. The base current controls the collector current, which is the principle of operation of a BJT.Under static conditions, the collector current is proportional to the base current, called the current gain. The HFA3096BZ has a current gain of 30 when operated at 30 MHz. In addition, it has an excellent return loss and a noise figure of 4 dB. It also offers an unprecedented level of power dispatch due to the high dielectric strength of the device structure. The HFA3096BZ transistor is mainly used in high-frequency RF applications. This can be most prominently observed in television networks, both in transmission and reception. It can also be used in radio transceivers, satellite communication systems, telecommunication systems and many more. When operating at frequencies between 30 to 300 MHz, the HFA3096BZ can offer superior high frequency response performance. This is because it has a high breakdown voltage and its low capacitance, making it ideal for applications in which high frequency signals need to be transmitted with little distortion. The HFA3096BZ transistor is also ideal for applications that require high linearity, since it has a differential gain, or DG, and a total harmonic distortion, or THD, of less than 10%. This reduces the amount of distortion that can be introduced during the transmission process, which can be especially helpful for applications like satellite communications.The HFA3096BZ transistor is a fully compatible with the most popular digital and analog applications. It is widely used in both the analog and digital domains, providing excellent performance and durability in both areas.In summary, the HFA3096BZ transistor is a high-frequency, two-stage, medium-power transistor used in various RF applications, and is classified as a bipolar junction transistor, commonly known as a BJT. Its main use is in high-frequency RF applications, including television networks, radio transceivers, satellite communications systems and telecommunication systems, among others. It offers superior high frequency response performance, a high breakdown voltage and a low capacitance, and can deliver excellent linearity performance due to its DG and THD of less than 10%. The HFA3096BZ is a fully compatible transistor with the most popular digital and analog applications, and is widely used in both the analog and digital domains.
The specific data is subject to PDF, and the above content is for reference
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