DDC114YU-7-F Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	68 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363
Base Part Number:	DDC114

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DDC114YU-7-F Application Field and Working Principle

The DDC114YU-7-F Pre-Biased Bipolar Transistor Array (BJT) is a low noise device designed for applications such as switched-receiver, sinusoidal Oscillators, and video amplifier applications. This device is built using multilayer, low-noise transistors with low-cost PNP and NPN bipolar transistors, providing a wide range of amplification. This product features pre-biased output for higher linearity, better thermal stability and improved high voltage stability.

1. Overview

The DDC114YU-7-F is an bipolar transistor array (BJT) device consisting of two PNP transistors and two NPN transistors all connected in a common emitter configuration. It is specifically designed to provide very low noise performance while maintaining high linearity, thermal stability, and high voltage stability.

2. Application Field and Characteristics

The DDC114YU-7-F Pre-Biased Bipolar Transistor Array (BJT) can be used in a wide range of applications, including switched-receiver, sinusoidal oscillators, video amplifier applications, and more. It features pre-biased output for higher linearity, better thermal stability and improved high voltage stability.The DDC114YU-7-F features very low noise performance with high linearity over a wide operating temperature range and is ESD protected for better reliability. It has a total power dissipation of 200 mW and a high voltage rated at up to 80 V. Its typical gain is 12 dB and its maximum gain is 20 dB. It also provides a low-cost means of providing amplification in high-frequency applications.

3. Working Principle

The DDC114YU-7-F works by applying a voltage directly to the two PNP and two NPN transistors. The PNP transistors are activated by a positive voltage with the voltage’s base being taken to ground. The NPN transistors are simultaneously activated by a negative voltage.When both the positive and negative voltages are applied, a current is created that passes between the two transistors. This generates an amplified signal that is amplified by the amount of voltage applied. The resulting output is then used as the amplified signal in the application.The DDC114YU-7-F is designed to provide a very low noise performance by using multilayer, low-noise transistors. It also provides a very low-cost way of providing amplification in high frequency applications.

4. Conclusion

The DDC114YU-7-F Pre-Biased Bipolar Transistor Array (BJT) is a low noise device that is designed to provide the highest levels of performance in applications such as switched-receiver, sinusoidal Oscillators, and video amplifier applications. It is built using multilayer, low-noise transistors that provide a wide range of amplification and features pre-biased output for higher linearity, better thermal stability and improved high voltage stability. The DDC114YU-7-F is an excellent choice for those who are looking for a high performance, low-cost amplifier for high-frequency applications.

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