UMD3NTR Allicdata Electronics

UMD3NTR Discrete Semiconductor Products

Allicdata Part #:

UMD3NTR-ND

Manufacturer Part#:

UMD3NTR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN/PNP PREBIAS 0.15W UMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: UMD3NTR datasheetUMD3NTR Datasheet/PDF
Quantity: 87000
Stock 87000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6
Base Part Number: *MD3
Description

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Unipolar metal-oxide-semiconductor double diffused N-channel metal oxide semiconductor field effect transistor (UMD3NTR) is a new kind of power switching devices that has been widely used in power switching systems since its introduction. It is a pre-biased device which has two distinct operating modes, that is, enhancement and depletion. Its main features are: low-power operation characteristics; low insertion loss; reverse current protection; excellent surge current and short-circuit ability.

In enhancement mode, the gate voltage passes through four stages. First, it turns on the drain current by applying a positive potential to the gate; then, it increases the drain current further by lowering the gate voltage gradually. Finally, the output voltage is stabilized by a gate-source voltage feedback control. This four-stage process is known as the third-field effect. And thus, the UMD3NTR can be pre-biased to a certain voltage value, thus a certain voltage can be forced across the source and drain.

In depletion mode, the gate voltage passes through three stages. First, the drain current is reduced by applying a negative potential to the gate; next, the drain current is further reduced by increasing the gate voltage gradually. Lastly, the output voltage is stabilized by the gate source voltage feedback again. This three-stage process is known as the dual-field effect which is one of the main features of the UMD3NTR.

The UMD3NTR also has several working principles. First, it operates under a constant drain-source voltage, also known as forward bias. This will cause the current to flow from the drain to the source when the gate voltage is at zero. Second, the UMD3NTR also works under a reverse bias where the gate voltage is slightly negative to the drain voltage. This will create strong reverse current protection and helps to reduce any leakage. Third, the UMD3NTR works under the fourth field effect where it will independently reverse and forward bias the drain source junction. Fourth, the UMD3NTR works under a fifth field effect where a reverse current will flow when the drain and source are under-biased.

Moreover, the power MOSFET UMD3NTR is ideal for applications requiring a high power output due to its low on-resistance ratings. Also, it is especially suitable for applications in the automotive industry, because it is characterized by its ability to handle high surge current and short-circuits. Since it has low gate capacitance and a fast switching speed, it also features high speed switching, improved signal fidelity, and low EMI/RFI noise.

In conclusion, the UMD3NTR is a pre-biased device and has a number of working principles, such as four-stage field effect and dual-field effect. It has low-power operation characteristics, low insertion loss, and excellent surge current, making it suitable for automotive industry applications. Moreover, it is ideal for use in power Switching systems due to its low on-resistance ratings and fast switching speed, along with its high signal fidelity and low EMI/RFI level.

The specific data is subject to PDF, and the above content is for reference

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