MRF5S9150HR5 Allicdata Electronics
Allicdata Part #:

MRF5S9150HR5-ND

Manufacturer Part#:

MRF5S9150HR5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 68V 880MHZ NI-780S
More Detail: RF Mosfet LDMOS 28V 1.5A 880MHz 19.7dB 33W NI-780
DataSheet: MRF5S9150HR5 datasheetMRF5S9150HR5 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 880MHz
Gain: 19.7dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 1.5A
Power - Output: 33W
Voltage - Rated: 68V
Package / Case: NI-780
Supplier Device Package: NI-780
Base Part Number: MRF5S9150
Description

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The MRF5S9150HR5 is a N-channel lateral mosfet that has been designed for use in high power, high-frequency radio-frequency (RF) applications, such as cellular base station amplifier applications. The MRF5S9150HR5 is fabricated using a resonant-field-effect (RFE) process and is comprised of a low-noise gallium-arsenide-field-effect transistor (GaAsFET) with a metal-oxide-semiconductor layer between the drain and source. The device is rated at a maximum power dissipation of 20 watts and a maximum frequency of 20 GHz.

The MRF5S9150HR5 works on the principle of the generation and manipulation of electric fields between the gate, drain, and source regions. When a voltage is applied to the gate, the electric field within the device can be controlled in order to modulate the current that flows through the device. This enables it to be used as an amplifier, allowing it to both increase the power of an input signal as well as allow its frequency to be manipulated. By controlling the gate voltage, the level of current passing through the device can be modulated, allowing it to be used as an amplifier or a switch.

The MRF5S9150HR5 has a number of important characteristics, one of which is its high power capabilities. This is due to its robust structure and layout of its drain, source, and gate. As a result, the MRF5S9150HR5 can handle large power levels, making it an ideal choice for applications such as cellular base station amplifiers, which can require large amounts of power. Additionally, the device has excellent frequency response, with a maximum frequency of 20 GHz, making it well suited for RF applications. Finally, the device is highly efficient, with a maximum power dissipation of 20 watts.

The MRF5S9150HR5 can be used in a wide range of applications, including cellular base station amplifiers, medical instrumentation, optical instrumentation, and any other application that requires high-power and high-frequency performance. Additionally, the device is well suited for military and aerospace applications, due to its robust design and reliability. As a result, the MRF5S9150HR5 is an excellent choice for any application requiring excellent frequency and power performance.

The specific data is subject to PDF, and the above content is for reference

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