Allicdata Part #: | MRF281SR1-ND |
Manufacturer Part#: |
MRF281SR1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 1.93GHZ NI-200S |
More Detail: | RF Mosfet LDMOS 26V 25mA 1.93GHz 12.5dB 4W NI-200S |
DataSheet: | MRF281SR1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 1.93GHz |
Gain: | 12.5dB |
Voltage - Test: | 26V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 25mA |
Power - Output: | 4W |
Voltage - Rated: | 65V |
Package / Case: | NI-200S |
Supplier Device Package: | NI-200S |
Description
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MRF281SR1 Application Field and Working Principle
The MRF281SR1 is a high power RF FET from Freescale Semiconductor. It is designed for high gain, wide bandwidth and high P1dB in a single plastic package. This device can be used in many different application areas such as base station amplifiers, CATV amplifiers, and distributed antenna systems. Additionally, the MRF281SR1 is constructed with advanced processing techniques resulting in excellent gain flatness over frequency range and high linearity when used in a differential amplifier or low noise amplifier circuit.The MRF281SR1 is a very efficient device and it delivers excellent results in many application areas. It is primarily a single-stage power FET that utilizes silicon on insulator (SOI) technology, which results in higher Figure of Merit (FOM) and lower capacitance per unit area compared to conventional FETs. As such, the MRF281SR1 can be used for power amplification up to 250W using devices in MOSFET body.The primary function of the MRF281SR1 is as an RF FET power amplifier. It is designed to amplify signal power in the frequency range of 824MHz to 960MHz and has a maximum power dissipation of 200W. The RF performance of the MRF281SR1 is excellent with a gain of 24dB, an excellent gain flatness, and a low noise figure of 0.8dB. Additionally, the device has an excellent intermodulation (IP3) level of +44dBm.The working principle of the MRF281SR1 is based on two principles. The first is the fact that the conduction region is only 8x0.25µm wide, meaning that for every unit of current flowing through the device, only one-eighth of the charge carriers pass through the gate. This results in less heat loss and more efficiency. The second is the use of SOI technology, which results in higher FOM and lower capacitance per area compared to conventional FETs.The MRF281SR1 is an excellent device for improving the performance of RF applications. It is specifically designed for high frequency applications, making it especially suitable for applications such as base station amplifiers, CATV amplifiers, and distributed antenna systems. Additionally, due to its advanced processing techniques, the device can provide excellent gain flatness over frequency range and high linearity. As such, it is an ideal choice for designing applications such as power amplifiers, low noise amplifiers, and differential amplifiers.The specific data is subject to PDF, and the above content is for reference
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