FQD7N10LTM Discrete Semiconductor Products

The FQD7N10LTM is an advanced enhancement mode Field Effect Transistor (FET) developed and manufactured by Fairchild Semiconductor. It is a single NMOS type MOSFET designed to give superior reliability, performance and versatility in a wide range of applications. The FQD7N10LTM features an optimized voltage range and on-state resistance, which are the key to its superior electrical characteristics. This MOSFET is suitable for use in high power applications up to 150V.

The FQD7N10LTM is a monolithic device in N-channel MOSFET technology, with a high side drain-source current capability of 450A. It is designed to provide superior performance in both low and high temperature operating conditions. The device operates in the enhancement mode, which allows for low input current and switching speed of up to 25khz. The FQD7N10LTM also has a high breakdown voltage rating of 150V.

The FQD7N10LTM is a MOSFET technology based component. As with any other MOSFET, it relies on electric fields created by the gate voltage (Vg) to control the flow of current through the device. In the OFF state, no current flows through the device, and in the ON state, current flows freely based on the gate voltage. The gate voltage is applied to the transistor\'s gate terminal, and the current is allowed to flow through the transistor only when a certain minimum voltage is attained.

The working principle behind the FQD7N10LTM is simple. When a voltage is applied to the gate terminal, an electric field is created. This electric field controls the flow of current through the device by attracting and repelling electrons. The more voltage that is applied, the stronger this electric field becomes, and the more current that can be forced through the transistor.

The FQD7N10LTM is ideal for use in a number of high power and current applications, such as motor control, power supplies, and UPS systems. Its extremely low on-state resistance allows for increased power efficiency, and its wide gate voltage range allows for precise and accurate control in switching applications. The FQD7N10LTM is also well suited for use in low voltage applications as it has a maximum drain-source voltage rating of 150V.

In conclusion, the FQD7N10LTM is an advanced enhancement mode Field Effect Transistor (FET) with superior reliability, performance and versatility in a wide range of applications. It is ideal for use in high power and current applications due to its increased power efficiency and precise control. The FQD7N10LTM operates based on the principle of electric fields created by the gate voltage, which in turn controls the flow of current through the device.