MRF21010LR1 Allicdata Electronics
Allicdata Part #:

MRF21010LR1-ND

Manufacturer Part#:

MRF21010LR1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 65V 2.17GHZ NI-360
More Detail: RF Mosfet LDMOS 28V 100mA 2.17GHz 13.5dB 10W NI-36...
DataSheet: MRF21010LR1 datasheetMRF21010LR1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 2.17GHz
Gain: 13.5dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 100mA
Power - Output: 10W
Voltage - Rated: 65V
Package / Case: NI-360
Supplier Device Package: NI-360
Base Part Number: MRF21010
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MRF21010LR1 is a N-Channel RF power field-effect transistor (FET) designed for high frequency applications. The transistor is offered in a 4-pin SOT-223 package and is well suited for applications such as W-CDMA base station and LTE base station. This N-channel MOSFET employs high-performance gateoxide and increased gate-controllability which makes it suitable for many RF applications.

In the MRF21010LR1, the drain current is transported by the drift layer diffusion mode. At a given gate voltage and drain voltage, the drain current is determined by the product of electron mobility and cross-sectional area of the drift layer. This current increases exponentially with increasing temperature due to the increase in temperature-dependent electron mobility. The gate oxide of the MOSFET provides an electrical insulation layer between the gate and the 2‐dimensional electron gas (2DEG) on the substrate.

The MRF21010LR1 is a high-frequency, low-noise device featuring a low on-resistance, wide voltage range, and excellent thermal performance. It has a typical gate capacitance of 5 pF, on-resistance of 1.2 Ω, and a maximum drain current of 240 mA. The capacitor just attaches to the gate electrode of the transistor and behaves like an ‘ACCUPRESSURE’ switch, increasing the threshold voltage as it is pressed, and reducing gate leakage current. This significantly reduces the power dissipation of the transistor, improves the operation in RF switching applications, especially in systems with several stages of operation such as a transmit-receive switching for cell-phone base stations.

The MRF21010LR1 is an ideal switch for small-signal and power switching applications, up to 800MHz. Due to its low on-state resistance and low drain-source capacitance, it is widely used in cell-phone base stations, 5G frequency communications, cellular wireless transmission, RF power amplifiers, wireless backhaul, and small cell base stations. Moreover, it is suitable for power and logic switch applications in automated test equipment, remote control systems, IOTs and any other RF applications requiring low on-state resistance.

The MRF21010LR1 utilizes a mismatched vertical epitaxial construction, which enables an extremely low parasitic resistance and power dissipation. This construction also provides benefits such as improved stability, low leakage current, and good electrical field control. The transistor also has a maximum threshold voltage of 3.5V and a maximum drain voltage of 65V. This makes it suitable for high voltage, high frequency, and high power applications.

In conclusion, the MRF21010LR1 is an N-Channel MOSFET that is well suited for high frequency, power and small-signal switching applications due to its low on-state resistance and low drain-source capacitance. Its mismatched vertical epitaxial construction enables its extremely low parasitic resistance and power dissipation as well as improved stability, low leakage current and good electrical field control. The device is highly efficient and is suitable for applications such as W-CDMA base station and LTE base station.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "MRF2" Included word is 40
Part Number Manufacturer Price Quantity Description
MRF282ZR1 NXP USA Inc 0.0 $ 1000 FET RF 65V 2GHZ NI-200ZRF...
MRF24301HSR5 NXP USA Inc 126.27 $ 50 250W AF17 2450MHZ NI780RF...
MRF275G M/A-Com Tech... 110.99 $ 10 FET RF 2CH 65V 500MHZ 375...
MRF24300NR3 NXP USA Inc 90.23 $ 1000 RF POWER LDMOS TRANS 2450...
MRF24300GNR3 NXP USA Inc 109.4 $ 1000 RF POWER LDMOS TRANSISTOR...
MRF24301HR5 NXP USA Inc -- 1000 250W AF17 2450MHZ NI-780R...
MRF282SR1 NXP USA Inc 0.0 $ 1000 FET RF 65V 2GHZ NI-200SRF...
MRF281SR1 NXP USA Inc 0.0 $ 1000 FET RF 65V 1.93GHZ NI-200...
MRF281ZR1 NXP USA Inc 0.0 $ 1000 FET RF 65V 1.93GHZ NI-200...
MRF21085LSR5 NXP USA Inc 0.0 $ 1000 FET RF 65V 2.17GHZ NI-780...
MRF21010LR1 NXP USA Inc 0.0 $ 1000 FET RF 65V 2.17GHZ NI-360...
MRF21085LSR3 NXP USA Inc 0.0 $ 1000 FET RF 65V 2.17GHZ NI-780...
MRF21045LR3 NXP USA Inc 0.0 $ 1000 FET RF 65V 2.17GHZ NI-400...
MRF21045LSR5 NXP USA Inc 0.0 $ 1000 FET RF 65V 2.17GHZ NI-400...
MRF21045LSR3 NXP USA Inc -- 1049 FET RF 65V 2.17GHZ NI-400...
MRF21045LR5 NXP USA Inc 0.0 $ 1000 FET RF 65V 2.17GHZ NI-400...
MRF21030LR5 NXP USA Inc 0.0 $ 1000 FET RF 65V 2.14GHZ NI-400...
MRF21010LR5 NXP USA Inc 0.0 $ 1000 FET RF 65V 2.17GHZ NI-360...
MRF21030LR3 NXP USA Inc 0.0 $ 1000 FET RF 65V 2.14GHZ NI-400...
MRF21010LSR5 NXP USA Inc 0.0 $ 1000 FET RF 65V 2.17GHZ NI-360...
MRF21010LSR1 NXP USA Inc -- 1000 FET RF 65V 2.17GHZ NI-360...
MRF206 NKK Switches 6.86 $ 1066 SWITCH ROTARY 2-6POS 0.4V...
MRF24J40MAT-I/RM Microchip Te... -- 1600 RF TXRX MOD 802.15.4 TRAC...
MRF24J40MA-I/RM Microchip Te... 6.51 $ 3106 RF TXRX MOD 802.15.4 TRAC...
MRF24J40ME-I/RM Microchip Te... 11.02 $ 197 RF TXRX MODULE 802.15.4 U...
MRF24J40MD-I/RM Microchip Te... 11.35 $ 615 RF TXRX MOD 802.15.4 TRAC...
MRF24WN0MA-I/RM100 Microchip Te... 12.12 $ 103 RF TXRX MODULE WIFI TRACE...
MRF24WB0MB/RM Microchip Te... 16.95 $ 890 RF TXRX MODULE WIFI U.FL ...
MRF24WG0MB-I/RM Microchip Te... 18.15 $ 549 RF TXRX MODULE WIFI U.FL ...
MRF24WG0MA-I/RM Microchip Te... -- 446 RF TXRX MODULE WIFI TRACE...
MRF24J40-I/ML Microchip Te... -- 436 IC RF TXRX+MCU 802.15.4 4...
MRF24WG0MBT-I/RM Microchip Te... 16.6 $ 350 RF TXRX MODULE WIFI U.FL ...
MRF24J40MDT-I/RM Microchip Te... 10.56 $ 1000 RF TXRX MOD 802.15.4 TRAC...
MRF24WN0MB-I/RM100 Microchip Te... 12.12 $ 85 RF TXRX MODULE WIFI W.FL ...
MRF24WB0MA/RM Microchip Te... 16.95 $ 51 RF TXRX MODULE WIFI TRACE...
MRF24XA-I/MQ Microchip Te... 0.0 $ 1000 IC RF TXRX+MCU 802.15.4 3...
MRF24J40MB-I/RM Microchip Te... 0.0 $ 1000 RF TXRX MOD 802.15.4 TRAC...
MRF24J40MBT-I/RM Microchip Te... 0.0 $ 1000 RF TXRX MOD 802.15.4 TRAC...
MRF24J40MC-I/RM Microchip Te... 0.0 $ 1000 RF TXRX MODULE 802.15.4 U...
MRF24J40MCT-I/RM Microchip Te... 0.0 $ 1000 RF TXRX MODULE 802.15.4 U...
Latest Products
MRF6S21050LR3

FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...

MRF6S21050LR3 Allicdata Electronics
MRF6S18060NR1

FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...

MRF6S18060NR1 Allicdata Electronics
MRF1550NT1

FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...

MRF1550NT1 Allicdata Electronics
MRF8S21100HSR3

FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...

MRF8S21100HSR3 Allicdata Electronics
LET16060C

FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...

LET16060C Allicdata Electronics
LET16045C

FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...

LET16045C Allicdata Electronics