Allicdata Part #: | MRF21010LR1-ND |
Manufacturer Part#: |
MRF21010LR1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 2.17GHZ NI-360 |
More Detail: | RF Mosfet LDMOS 28V 100mA 2.17GHz 13.5dB 10W NI-36... |
DataSheet: | MRF21010LR1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.17GHz |
Gain: | 13.5dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 10W |
Voltage - Rated: | 65V |
Package / Case: | NI-360 |
Supplier Device Package: | NI-360 |
Base Part Number: | MRF21010 |
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The MRF21010LR1 is a N-Channel RF power field-effect transistor (FET) designed for high frequency applications. The transistor is offered in a 4-pin SOT-223 package and is well suited for applications such as W-CDMA base station and LTE base station. This N-channel MOSFET employs high-performance gateoxide and increased gate-controllability which makes it suitable for many RF applications.
In the MRF21010LR1, the drain current is transported by the drift layer diffusion mode. At a given gate voltage and drain voltage, the drain current is determined by the product of electron mobility and cross-sectional area of the drift layer. This current increases exponentially with increasing temperature due to the increase in temperature-dependent electron mobility. The gate oxide of the MOSFET provides an electrical insulation layer between the gate and the 2‐dimensional electron gas (2DEG) on the substrate.
The MRF21010LR1 is a high-frequency, low-noise device featuring a low on-resistance, wide voltage range, and excellent thermal performance. It has a typical gate capacitance of 5 pF, on-resistance of 1.2 Ω, and a maximum drain current of 240 mA. The capacitor just attaches to the gate electrode of the transistor and behaves like an ‘ACCUPRESSURE’ switch, increasing the threshold voltage as it is pressed, and reducing gate leakage current. This significantly reduces the power dissipation of the transistor, improves the operation in RF switching applications, especially in systems with several stages of operation such as a transmit-receive switching for cell-phone base stations.
The MRF21010LR1 is an ideal switch for small-signal and power switching applications, up to 800MHz. Due to its low on-state resistance and low drain-source capacitance, it is widely used in cell-phone base stations, 5G frequency communications, cellular wireless transmission, RF power amplifiers, wireless backhaul, and small cell base stations. Moreover, it is suitable for power and logic switch applications in automated test equipment, remote control systems, IOTs and any other RF applications requiring low on-state resistance.
The MRF21010LR1 utilizes a mismatched vertical epitaxial construction, which enables an extremely low parasitic resistance and power dissipation. This construction also provides benefits such as improved stability, low leakage current, and good electrical field control. The transistor also has a maximum threshold voltage of 3.5V and a maximum drain voltage of 65V. This makes it suitable for high voltage, high frequency, and high power applications.
In conclusion, the MRF21010LR1 is an N-Channel MOSFET that is well suited for high frequency, power and small-signal switching applications due to its low on-state resistance and low drain-source capacitance. Its mismatched vertical epitaxial construction enables its extremely low parasitic resistance and power dissipation as well as improved stability, low leakage current and good electrical field control. The device is highly efficient and is suitable for applications such as W-CDMA base station and LTE base station.
The specific data is subject to PDF, and the above content is for reference
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