MRF21045LR3

The MRF21045LR3 is an RF LDMOS transistor device optimized for use in mobile handset, power amplifier applications up to 1.9 GHz. The device integrates a small-geometry LDMOS transistor technology and is designed using a Darlington configuration. It is characterized by low power dissipation, high gain, high efficiency, and high output power.

Application Field

The MRF21045LR3 is designed to be used in wide variety of applications in the mobile handset market. It is used in applications such as base stations and handheld radios. It can also be used in a variety of other applications such as cellular repeaters, hands free devices, and wireless network devices. Its unique combination of performance parameters allows it to be used in a variety of applications.

Working Principle

The working principle of the MRF21045LR3 is based on a Darlington configuration. Two transistors are connected in a cascoded configuration to provide the high current gain and high voltage compliance for RF applications. The cascode configuration consists of two transistors with the gates connected in parallel, the drain connected to the emitters and the sources connected to the collectors. The two transistors are operated in parallel in order to provide the high current gain and voltage compliance required in RF applications.

The device also uses a gate pull-up / gate-down gate control circuit which provides a high speed gain/attenuation control of the RF output signal. The gate control circuit is also used to adjust the impedance matching of the device in order to optimize the device performance. The impedance matching is adjusted by varying the impedance of the gate control circuit.