Allicdata Part #: | MRF21045LR5-ND |
Manufacturer Part#: |
MRF21045LR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 2.17GHZ NI-400 |
More Detail: | RF Mosfet LDMOS 28V 500mA 2.16GHz ~ 2.17GHz 15dB 1... |
DataSheet: | MRF21045LR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.16GHz ~ 2.17GHz |
Gain: | 15dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 500mA |
Power - Output: | 10W |
Voltage - Rated: | 65V |
Package / Case: | NI-400 |
Supplier Device Package: | NI-400 |
Base Part Number: | MRF21045 |
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The MRF21045LR5 is a RF MOSFET component employed for small-signal and high-linear isolator and amplifier applications. It features low Drain-Source On-Resistance (RDS(on)) and high breakdown voltage values as well as reliable performance and small die area, making it suitable for usage in wide range of mobile communication such as GSM, WCDMA, CDMA, PCS and other wireless system.
The MRF21045LR5 consists of three major parts: the gate, the source and the drain. The gate is used to control the current flow in the device. The source forms the input of the device while the drain forms the output. The two electrodes of the gate, source and drain form a three-terminal device, which allows current to pass through the device when it is stimulated by a suitable voltage applied to the gate.
The main application of MRF21045SR5 is in small-signal and high-linear isolator and amplifier applications. With its low RDS(on), high breakdown voltage, this component can be employed in high density, highly linear and efficient isolator and amplifier circuits for applications ranging from GSM 900MHz to WCDMA, CDMA and PCS systems. It can also be used in the transmission of digital signals, such as those used for FM and video signals, and for Wi-Fi and NFC applications.
In addition to its small die size, the MRF21045LR5 also has other advantages, including high voltage handling capability, fast switching times and lower gate drive costs. It also has special extended performance specified in LTE Advanced band 42 and other GSM/EDGE bands.
In terms of its working principle, the MRF21045LR5 works using a simple principle, whereby a voltage applied to the gate causes the current to flow between the source and the drain. As with all other MOSFETs, this component can be used as either a switch or an amplifier, depending on the voltage applied to the gate. As a switch, the current flow is either blocked (when the gate voltage is low) or allowed (when the gate voltage is high). As an amplifier, the current is controlled by the gate, allowing for changes in gain and linearity.
The MRF21045LR5 is thus an excellent choice for small-signal and high linear isolator and amplifier applications. With its highly reliable performance, low RDS(on), high breakdown voltage, and small die area, this component is perfect for usage in mobile communications, digital signal transmission, and Wi-Fi and NFC applications.
The specific data is subject to PDF, and the above content is for reference
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