SI4410DYTRPBF Allicdata Electronics

SI4410DYTRPBF Discrete Semiconductor Products

Allicdata Part #:

SI4410DYPBFTR-ND

Manufacturer Part#:

SI4410DYTRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 10A 8-SOIC
More Detail: N-Channel 30V 10A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: SI4410DYTRPBF datasheetSI4410DYTRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: HEXFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 15V
FET Feature: --
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description

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By definition, the SI4410DYTRPBF is a power MOSFET (metal-oxide semiconductor field-effect transistor). It is from the single type of FETs (Field Effect Transistors) and is built using a monolithic junction FET. The SI4410DYTRPBF has a wide range of applications, including as a digital switch, amplifier, power supply, and power switch. It can also be used in various industries such as telecommunication, industrial, automotive, and computer. This article will provide an overview of the application field and working principles of the SI4410DYTRPBF.

Application Field

The SI4410DYTRPBF MOSFET is a type of power MOSFET, which is a component that is used for controlling the flow of electricity in a circuit. It is particularly useful for applications requiring high current and power handling capability, as well as for applications that require high speed of operation. The MOSFET is well suited for application in high power switching applications including in digital switch, amplifier, power supply, power switch, and other related applications. The SI4410DYTRPBF can also be used in digital circuits, industrial equipment, automotive applications, computer applications, and various other applications.

Working Principle

The working principle of the SI4410DYTRPBF can be understood by considering its construction, which consists of a substrate, gate, and source. The substrate consists of semiconductor material such as silicon and is used to form the channel between the gate and source, which enable the flow of current. The gate is the control element that regulates the flow of current in the channel created between the substrate and source. The source is the positive terminal from which current will flow when the gate is in the "On" mode.

When the gate is in off mode, the current will not flow from the source to the gate, as the gate control element prevents the electron flow. To switch the device on, a pulse of voltage is applied to the gate, allowing the electrons to flow from the source to the gate, thus establishing the current flow. When the gate voltage is set to zero, the gate and source are disconnected, thus stopping the current flow.

The SI4410DYTRPBF can be switched between on and off states using various methods, such as using a power MOSFET switch or a gate drive circuit. The gate drive circuit typically requires additional components, such as resistors, capacitors, and diodes, in order to be able to switch the device on and off in a controlled manner.

Conclusion

The SI4410DYTRPBF is a single type of power MOSFET designed for high power switching applications such as as a digital switch, amplifier, power supply, and power switch. It has a wide range of applications in various industries including telecommunication, industrial, automotive, and computer. The working principle of a SI4410DYTRPBF is based on the use of a substrate, gate, and source, combined with a gate drive circuit, which can easily and effectively switch the device on and off.

The specific data is subject to PDF, and the above content is for reference

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