SI9926CDY-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI9926CDY-T1-E3TR-ND |
Manufacturer Part#: |
SI9926CDY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 20V 8A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 8A 3.1W Surfac... |
DataSheet: | SI9926CDY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 8A |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 8.3A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 10V |
Power - Max: | 3.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | SI9926 |
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The SI9926CDY-T1-E3 is a type of transistor array that is used primarily in digital and analog electronic devices. It is a type of FET (Field-Effect Transistor) and operates with an N-channel MOSFET (Metal Oxide Semiconductor). This type of transistor is usually found in the form of an integrated circuit (IC) package or a chip.
The SI9926CDY-T1-E3 is suitable for applications where a large number of channels need to be driven while using a low number of power components. Its main application is in switching power supplies, motor drivers, audio amplifiers, and motor controllers. It is also used in high-speed switching circuits such as pulse and logic circuits, and can be used as logic circuits in other motor control applications.
The working principle of the SI9926CDY-T1-E3 is based on the use of an N-channel MOSFET. When the gate voltage is positive, the transistor gate is turned on and current is allowed to flow from Drain to Source. At the same time, the gate voltage is pulled low, preventing the flow of current when the gate voltage is negative. The N-channel MOSFET makes this type of transistor reliable and highly efficient in terms of power consumption and heat dissipation.
The SI9926CDY-T1-E3 is designed to operate in junction temperature ranging from -55°C to +150°C and can handle up to 25A of peak current. The package is designed to provide a solid and reliable electronic connection to various terminals and can be used in surface mount, through-hole, or both. It is also designed to meet the requirements of ESD protection, making it suitable for use in high-speed applications.
The SI9926CDY-T1-E3 is an excellent choice for a wide range of applications. Its high power capability and temperature tolerance make it ideal for use in industrial and automotive electronics. Its low number of power components makes it an ideal choice for switching power supplies, motor drivers, and motor controllers. It is also widely used in audio amplifiers, logic circuits, and pulse circuits.
The specific data is subject to PDF, and the above content is for reference
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