BC847BV,115 Allicdata Electronics

BC847BV,115 Discrete Semiconductor Products

Allicdata Part #:

1727-2634-2-ND

Manufacturer Part#:

BC847BV,115

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS 2NPN 45V 0.1A SOT666
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 10...
DataSheet: BC847BV,115 datasheetBC847BV,115 Datasheet/PDF
Quantity: 4000
4000 +: $ 0.04288
8000 +: $ 0.03728
12000 +: $ 0.03169
28000 +: $ 0.02982
100000 +: $ 0.02479
Stock 4000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Base Part Number: BC847BV
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
Description

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The BC847BV,115 is a high-frequency top bipolar transistor in a small SOT-23 package, designed for low voltage, low noise and high speed applications. Its design and structure make it ideal for use in a wide range of electronics applications and in particular, it is particularly suited for use as analog switches, electronic multiplexers, and in the control circuitry of video and audio amplifiers.

A bipolar transistor is a three-terminal device made of two p-type and two n-type semiconductors sandwiched between two metal plates. These devices form one of the two main types of transistors most commonly used in digital circuits today, the other being field-effect transistors (FETs). Bipolar transistors are also referred to as BJT’s (Bipolar Junction Transistors).

When voltage is applied to the base terminal, it increases the likelihood of current flowing between the collector and the emitter terminals, a process known as “electron injection”. This current flow between the collector and the emitter is the size of the delivered current or voltage, depending on what kind of load the circuit is connected to. When the base current decreases or stops, electron injection is stopped, and the current or voltage also stops.

BC847BV,115 is an array of NPN transistors and consists of three pins: the base, the collector and the emitter. The array is designed so that each NPN transistor provides a gain of 75. It offers a wide voltage range, from 7V to 30V, with a minimum current gain of 75 and a low gain-bandwidth product of 2 MHz. It has a low noise-figure of 5.8 dB and a low saturation voltage of 0.3 V.

Due to its high-speed operation and low power consumption, the BC847BV,115 is ideal for use in power switch applications where rapid switching of large current at low voltage is required. Additionally, it is suitable for use in analog switches and multiplexers, as well as in video and audio amplifiers. It can be used in switching power converters for motor control, dc-dc converters, clocks and timing applications, as well as for switching loads. In addition, the BC847BV,115 is suitable for use in telecom and networking applications such as power over Ethernet, high-speed data communication, GSM and WLAN.

To sum up, the BC847BV,115 is a high-frequency top bipolar transistor in a small SOT-23 package designed for low voltage, low noise and high speed applications. It has a wide voltage range, a low saturation voltage, a low noise-figure and high current gain of 75. It is suitable for use in analog switches, multiplexers, video and audio amplifiers, as well as in telecom and networking applications. The device exhibits excellent high-speed operation, low power consumption, making it an ideal choice for power switch applications.

The specific data is subject to PDF, and the above content is for reference

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