BC847BVN,115 Allicdata Electronics

BC847BVN,115 Discrete Semiconductor Products

Allicdata Part #:

1727-4852-2-ND

Manufacturer Part#:

BC847BVN,115

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN/PNP 45V 0.1A SOT666
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA ...
DataSheet: BC847BVN,115 datasheetBC847BVN,115 Datasheet/PDF
Quantity: 24000
4000 +: $ 0.05405
8000 +: $ 0.04865
12000 +: $ 0.04324
28000 +: $ 0.04054
Stock 24000Can Ship Immediately
$ 0.06
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Base Part Number: BC847BVN
Description

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The BC847BVN,115 is a small signal NPN transistor that belong to the Arrays-Bipolar (BJT) Transistor family. It is an ideal choice for use in audio amplifiers and other low noise applications including amplifiers, switches and converters.

The BC847BVN,115 is designed to operate at a minimum collector-emitter voltage of 15volts, a collector current of 1.2A and a maximum power dissipation of 250mW. Additionally, the device offers a variety of features including a high voltage breakdown of 45volts, a low output noise level of 1.0nV/√HZ, a low collector-emmitter saturation voltage of 0.2V and a high hFE of 100 to 700 at a collector current of 10mA to 10A respectively.

The BC847BVN,115 has a wide range of application areas, including audio amplifiers, switches and converters. This type of transistor exhibits great performance when used for audio input amplifiers, allowing signals to be amplified quickly and accurately. Additionally, its low noise output makes it suitable for use in RF amplifiers and signal processing circuits. The bipolar transistor also makes an excellent choice for switching applications, allowing for small and efficient switches with fast response times.

The working principle of the BC847BVN,115 is based on its useful properties as a bipolar junction transistor (BJT). BJTs are used as amplifying devices and can be classified as either NPN or PNP, depending on their construction and doping of the semiconductor material. The BC847BVN,115 is NPN type BJT and functions by using the additional current flow between the base and emitter terminals. When a current flows into the base terminal, a larger current will flow from the collector to the emitter, allowing the device to act as an amplifier.

In conclusion, the BC847BVN,115 bipolar transistor array is the ideal choice for low noise applications. It offers a wide range of features and its working principle is based on the useful properties of bipolar junction transistor. With a minimum collector-emitter voltage of 15volts, a collector current of 1.2A and a maximum power dissipation of 250mW, the BC847BVN,115 is suitable for use in audio amplifiers, switches and converters as well as RF amplifier and signal processing circuits.

The specific data is subject to PDF, and the above content is for reference

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