Allicdata Part #: | 497-5453-ND |
Manufacturer Part#: |
SD1274 |
Price: | $ 40.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN RF MICROWAVE VHF M135 |
More Detail: | RF Transistor NPN 16V 8A 70W Surface Mount M135 |
DataSheet: | SD1274 Datasheet/PDF |
Quantity: | 24 |
1 +: | $ 36.48960 |
10 +: | $ 34.27520 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 16V |
Frequency - Transition: | -- |
Noise Figure (dB Typ @ f): | -- |
Gain: | 10dB |
Power - Max: | 70W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 250mA, 5V |
Current - Collector (Ic) (Max): | 8A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | M135 |
Supplier Device Package: | M135 |
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SD1274 is a type of transistor device known as a bipolar junction transistor (BJT). It is generally used for radio frequency (RF) applications, and it is characterized by its high frequency performance and low noise form factor. In addition, it has a low power consumption, excellent linearity, and a high breakdown voltage. This article will discuss the SD1274\'s application field and working principle.
SD1274 RF Application
SD1274 is commonly used for radio frequency applications. This is due to its excellent linearity, low power consumption, and high breakdown voltage. In many applications such as microwave ovens, wireless routers, radar systems, and satellite communication systems, SD1274 is the preferred transistor device. In addition, it is a good choice for high frequency oscillators and amplifiers used in these systems.
SD1274 Working Principle
The SD1274 transistor device utilizes a P-type semiconductor in combination with two N-type semiconductors to form a three-terminal active device. This arrangement allows the transistor device to be used as an amplifier, switch or driver in RF applications. The SD1274 transistor uses a P-type semiconductor layer as a base and two N-type semiconductor layers as the collector and emitter. By applying various levels of forward-bias to the semiconductor layers, the transistor device\'s conduction characteristics can be altered. This, in turn, allows the SD1274 to amplify a signal, provide power switching, and drive an RF load.
The SD1274 transistor device also provides excellent linearity and high breakdown voltage. The high breakdown voltage enables the SD1274 to handle higher voltages without failing. This feature makes the SD1274 device ideal for use in higher power RF circuits. For example, the SD1274 can handle up to 100V, making it suitable for use in wireless charging and telecom applications.
Conclusion
In conclusion, SD1274 is a bipolar junction transistor (BJT) device that is commonly used for radio frequency (RF) applications. It is characterized by its high frequency performance, low noise form factor, low power consumption, excellent linearity, and high breakdown voltage. This combination of features makes the SD1274 the ideal transistor device for RF applications such as high frequency oscillators and amplifiers used in microwave ovens, wireless routers, radar systems, and satellite communication systems.
The specific data is subject to PDF, and the above content is for reference
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