MJE200G Allicdata Electronics
Allicdata Part #:

MJE200GOS-ND

Manufacturer Part#:

MJE200G

Price: $ 0.37
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 5A TO225AA
More Detail: Bipolar (BJT) Transistor NPN 40V 5A 65MHz 15W Thro...
DataSheet: MJE200G datasheetMJE200G Datasheet/PDF
Quantity: 845
1 +: $ 0.34020
10 +: $ 0.29295
100 +: $ 0.21893
500 +: $ 0.17202
1000 +: $ 0.13292
Stock 845Can Ship Immediately
$ 0.37
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Power - Max: 15W
Frequency - Transition: 65MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA
Base Part Number: MJE200
Description

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The MJE200G is a silicon NPN power transistor utilizing advanced epitaxial-base technology to achieve high power gain, low noise and low saturation voltage. This transistor is used primarily in power switching circuits such as relay drivers, in amplifier circuits and in other applications requiring high power dissipation.

This NPN transistor is part of the single-bipolar transistor family of devices and can be used in multiple applications. It offers good frequency response, high current gain and good thermal dissipation performance. This transistor is designed for applications requiring high power switching, amplifier, and motor control circuits, including those for automotive, industrial, and telecom systems.

The MJE200G has a maximum current gain of 800 and a voltage gain of 2.6 V/V. It also has a maximum total power dissipation of 5 W, and a maximum collector dissipation of 3.2 W. The maximum collector-emitter voltage is 20 V, and the maximum collector-base voltage is 40 V. The maximum collector current is 9 A and the maximum base current is 3.2 A.

The MJE200G has a variety of features which make it well-suited for switching applications. It has low saturation voltage, high current gain, low power dissipating, and good thermal and frequency response. It also has good current transfer ratio (CTR) and a high input and output impedance. This allows it to be used in a wide variety of switching applications.

The working principle of the MJE200G is based on the transistor action. A small current (base current) applied to the base terminal causes a large current (collector current) to flow from the collector to the emitter. This current is controlled by the base current, thus allowing for the control of large currents with a small control current. This action is known as transistor action and is used in many devices such as amplifiers, motor controllers, and so on.

The MJE200G is a versatile power transistor that can be used in a variety of switching applications. It has low saturation voltage, high current gain, low power dissipating, and good thermal and frequency response. It also has good current transfer ratio (CTR) and a high input and output impedance. This makes it suitable for a wide range of switching applications such as relay drivers, amplifier circuits, and other applications requiring high power dissipation.

In conclusion, the MJE200G is a versatile single-bipolar transistor capable of handling high current and power dissipation. It has a maximum current gain of 800 and a voltage gain of 2.6 V/V. Its features such as low saturation voltage, high current gain, low power dissipating, and good thermal and frequency response make it ideal for switching applications. The working principle of the MJE200G is based on transistor action and enables the control of large currents with a small control current.

The specific data is subject to PDF, and the above content is for reference

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