Allicdata Part #: | DTA114TM3T5GOSTR-ND |
Manufacturer Part#: |
DTA114TM3T5G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 260MW SOT723 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA114TM3T5G Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.03202 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 260mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | SOT-723 |
Base Part Number: | DTA114 |
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DTA114TM3T5G - An Overview
DTA114TM3T5G transistors are pre-biased transistors typically used in consumer electronic equipment, such as televisions and VCRs. They are available in a wide array of package sizes and types and offer excellent performance characteristics and reliability. This article will provide an overview of the DTA114TM3T5G application field, working principle and features.
Application Field
The DTA114TM3T5G transistors are typically used in consumer electronic equipment such as televisions and VCRs, particularly where short switching times are required. This is due to the high switching speeds of the device, which makes them ideal for use in video and audio applications. They are also used in other high frequency applications, such as for controlling energy efficient lighting systems, and for discrete level control circuits.
Working Principle
The DTA114TM3T5G is a bipolar, single transistor constructed using a PNP (positive-negative-positive) junction configuration. It is a NPN collector base junction type and has a semiconductor layer of gallium arsenide, which helps to reduce distortion and noise while improving switching speeds. The emitter-collector junction is reverse biased and this provides voltage gain when the signal passes through the transistor. As with most transistors, the DTA114TM3T5G has three leads, two for the base and one for the collector.
Features
The DTA114TM3T5G transistors are pre-biased transistors, which means that they have a voltage drop between the base and the emitter. This voltage drop helps the device to turn on quickly and reduces power consumption. The DTA114TM3T5G also has an excellent breakdown voltage of 300V and a low collector-emitter saturation voltage of 170mV. This ensures that the transistor can handle large voltage differences, while also minimizing any power losses. Additionally, the transistor also has a very low on-state leakage current of 30nA, which helps to reduce the amount of power consumed when the device is in an off state.
Conclusion
The DTA114TM3T5G is an extremely versatile pre-biased transistor that can be used in a variety of applications, including those requiring short switching times, discrete level control circuits, and high frequency devices. The excellent switching speeds and breakdown voltage, along with the low leakage current, make it a dependable and reliable device for many applications. It is a good choice for anyone looking for a pre-biased transistor for a variety of tasks.
The specific data is subject to PDF, and the above content is for reference
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