DTA115EM3T5G Allicdata Electronics
Allicdata Part #:

DTA115EM3T5GOSTR-ND

Manufacturer Part#:

DTA115EM3T5G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 260MW SOT723
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA115EM3T5G datasheetDTA115EM3T5G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 260mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723
Base Part Number: DTA115
Description

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The DTA115EM3T5G is a single pre-biased BJT (Bipolar Junction Transistor). This type of transistor is used in a wide variety of applications, from switching circuits to data transmission, and is generally considered highly reliable. In terms of its form factor, it is a two-terminal device, with internal circuitry for controlling current flow between the two points. As such, it is often referred to as a field effect transistor.

In terms of its working principle, the DTA115EM3T5G transistor functions by exploiting the semi-conducting properties of a particular material. At the heart of the transistor is a base, surrounded by three layers of semi-conducting material known as the emitter, collector, and base, respectively. These layers are held in place by a protective film. When a current is applied to the base, the semi-conducting materials will become either more or less conductive, depending on the direction and strength of the current. This allows the transistor to manipulate and control the current flow between the two points.

The DTA115EM3T5G is primarily used in switching circuits, such as in computers, where it can be used to create high-speed circuits and enable reliable and accurate data to be transmitted. It can also be used in amplifiers and other audio equipment, providing a high level of signal transmission with low signal loss. Additionally, it can be used in power conversion and other power management applications. The DTA115EM3T5G is designed to operate at relatively high temperatures, and has a low turn-off time, making it suitable for high-speed switching circuits.

In addition, the DTA115EM3T5G is designed to be an efficient device, with a low ON resistance and a high current capacity. This means that the transistor will be able to dissipate less heat, thereby reducing power consumption and lowering system costs. Additionally, the DTA115EM3T5G is designed to be highly reliable and durable, and is available in a wide range of packages, enabling it to be used in a variety of applications.

The DTA115EM3T5G offers a wide range of features and benefits, making it suitable for a variety of applications. It is designed to be a highly efficient device, with a low ON resistance and a high current capacity, enabling it to be used in high-speed switching circuits. It is also designed to be highly reliable and durable, and is available in a range of packages, enabling it to be used in a variety of applications. Additionally, it can be used in power conversion and other power management applications. In short, the DTA115EM3T5G is a highly efficient, reliable, and versatile device.

The specific data is subject to PDF, and the above content is for reference

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