DTA124TMT2L Allicdata Electronics
Allicdata Part #:

DTA124TMT2L-ND

Manufacturer Part#:

DTA124TMT2L

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 150MW VMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA124TMT2L datasheetDTA124TMT2L Datasheet/PDF
Quantity: 1000
8000 +: $ 0.03308
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3
Base Part Number: DTA124
Description

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A DTA124TMT2L BJT is a single pre-biased transistor that operates as an integrated circuit. It is used for various applications and works by switching electrical current from one side (the source) to the other (the sink). This type of transistor is often referred to as a digital signal transistor, because it is capable of carrying out a variety of signal-producing tasks.
The DTA124TMT2L is often used in the field of radio frequency (RF) signal processing, in which it is used to switch signals between one device and another. It is also commonly used in automotive applications, as it can be used to control a variety of sensors and actuators. In addition, this type of transistor is often used in circuit design, in which it is used to switch between two different levels of power in order to regulate the current flowing through the circuit. Many small-scale DC power supplies make use of DTA124TMT2L transistors for efficient power regulation.
The DTA124TMT2L BJT is a type of bipolar transistor, meaning that it is composed of two layers of semiconductor material, the “emitter” and the “collector”. These layers are separated by a base layer of a different material, called the “base”. In a bipolar transistor, the electric current between the emitter and the collector is controlled by a small voltage applied to the base. When this voltage is increased, the current flowing between the emitter and collector increases as well.
The DTA124TMT2L transistor is pre-biased, meaning that it has an initial voltage applied to the base before it is turned on. This initial voltage, called the bias voltage, is typically lower than the voltage required to turn the transistor on. The pre-biased configuration ensures that the transistor is in its “on” state before it is exposed to the fluctuation in voltage that accompanies its normal operation. This allows for greater efficiency and reliability. This type of transistor also has a low-power operation that allows it to be used in a wide range of low-power applications. This is because the low-power operation of the transistor enables it to operate at a lower voltage than is required for other types of transistors. This makes the transistor more energy efficient and allows it to save power.Due to its pre-biased configuration and low power operation, the DTA124TMT2L is well-suited for applications that involve the transferring of signals between one device and another. It is also well-suited for applications that require low-power operation and the efficient switching of electrical current. This type of transistor is commonly used in a variety of applications, from automotive and RF to circuit design.

The specific data is subject to PDF, and the above content is for reference

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