Allicdata Part #: | FJN4310RTA-ND |
Manufacturer Part#: |
FJN4310RTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 300MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | FJN4310RTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
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The FJN4310RTA is a single pre-biased bipolar junction transistor (BJT) that has a wide range of uses in electronic applications. Its low current capacity and small physical dimensions make it ideal for applications requiring small circuit board real estate. The FJN4310RTA has three pins: the collector (C), emitter (E), and base (B). The FJN4310RTA is intended for use in the following applications: small signal amplifiers, current and voltage buffers, power supplies, and various other DC-to-DC converters. It is also suitable for applications where low noise and high speed are desired.The FJN4310RTA has a low noise characteristic, a high noise figure (NF) of 1.3dB, and a low noise voltage of 2.4mV maximum at 1.0MHz. In addition, it provides a low distortion, wide bandwidth of up to 500MHz with low emitter feedback noise of 155μV. It has an excellent input impedance of 35kΩ and a high packing density, making it ideal for high-density boards.The FJN4310RTA is integrated in a through-hole package and is available in both ceramic and plastic surface-mount packages. It has a maximum collector-to-emitter voltage of 40V and can handle a maximum collector current of 1.5A. The device has a high reverse leakage current of 5.5mA at 25˚C and a low saturation voltage of 0.86V.The FJN4310RTA’s internal structure consists of a BJT with a pre-biased configuration. This ensures a high current gain at the low voltage and high current range. The pre-biased configuration additionally eliminates the need for external circuitry to bias the device, decreasing the complexity and cost of the required circuitry.The BJT structure also allows the FJN4310RTA to act as a switched capacitor amplifier, allowing it to operate at higher frequencies with lower power consumption. This makes it suitable for use in applications such as filters, signal detectors, signal modulators, and oscillators. The FJN4310RTA can also act as an amplifier with a gain of up to 10dB.The FJN4310RTA is a versatile transistor, possessing both low-frequency and high-frequency operation capabilities and multiple biasing configurations, allowing it to fill many electronic roles. Its low current and low noise make it ideal for use in small-signal amplifiers, current and voltage buffers, power supplies, and various other DC-to-DC converters. With its low noise characteristic and its ability to operate at higher frequencies with lower power consumption, the FJN4310RTA is a great choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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