FJN4302RBU Allicdata Electronics
Allicdata Part #:

FJN4302RBU-ND

Manufacturer Part#:

FJN4302RBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 300MW TO92-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: FJN4302RBU datasheetFJN4302RBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: FJN4302
Description

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The FJN4302RBU is a type of bipolar junction transistor (BJT) known as a single, pre-biased transistor. It is a small, low-power NPN transistor that is typically used as an input in low-noise amplifiers and low-voltage bipolar power drive circuits. As a pre-biased transistor, it is designed to provide a predetermined base-to-emitter voltage when the collector is disconnected and the base is connected to a logic-level voltage.

The FJN4302RBU can be employed in a variety of different applications, such as radio and television amplifiers, telephone and datacom amplifiers, and audio amplifiers, as well as in low-power applications such as small portable radios and transistor radios. Additionally, it can be used in automotive applications, such as car radios and ignition systems. Additionally, the FJN4302RBU can be used in a variety of digital logic circuits, such as flip-flops, shift registers, and other discrete logic components.

The FJN4302RBU is used in circuits where it can provide low-voltage and low-noise operation. It is typically used in circuits where the base-to-emitter voltage is applied at the same time that the collector is connected. This allows the transistor to remain in its active state, allowing for the circuit to operate with less power. Additionally, it can be used in circuits where the base current must be limited to a certain value.

When the FJN4302RBU is used in a circuit, its working principle is relatively simple. The transistor works by controlling the flow of current between the base and the collector. By applying a voltage to the base, this flow of current is amplified, and the voltage that is applied to the collector is increased. The increased voltage that is applied to the collector is then used to control the current flowing through the circuit.

In addition to working in low-power and low-voltage applications, the FJN4302RBU is also able to operate in higher power and higher voltage circuits. Its base-to-emitter voltage can also be adjusted to provide the desired level of performance. This provides further flexibility and control over the current that is being used in the circuit. Additionally, it can be used in applications where the base-to-emitter voltage must be kept low to prevent over-driving the transistor.

Overall, the FJN4302RBU is an excellent choice for a variety of different applications. It is capable of providing reliable performance in low-power and low-voltage circuits, as well as in higher power and higher voltage circuits. Additionally, its pre-biased nature allows for the circuit to operate with less power and provides further control over the current that is being used in the circuit. Lastly, its working principle is straightforward and easy to understand, making it an ideal solution for a variety of different applications.

The specific data is subject to PDF, and the above content is for reference

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