Allicdata Part #: | FJN4313RBU-ND |
Manufacturer Part#: |
FJN4313RBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 300MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | FJN4313RBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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The FJN4313RBU is a single, pre-biased bipolar junction transistor (BJT) designed for use in a variety of electronic applications. The transistor consists of four terminals, the emitter, collector, and base, as well as an emitter and collector current sensing lead. The leads are conveniently arranged in four rows, and the transistor structure itself consists of an NPN structure with integrated emitter and collector current sensing.
The FJN4313RBU is a PN junction type which has an un-biased breakdown voltage of 20V, and an operating voltage range of 5V to 12V. The highest common-mode input voltage it can handle is 6V. The current gain ranges from 25 to 800, with a maximum collector current of 1.6A and a maximum collector-emitter voltage of 400V.
The main features of the FJN4313RBU are its high current gain, low noise operation, and low on-state resistance. Its low on-state resistance ensures minimal losses in the circuit, while its fast switching speed allows for quick response to low input signals. Its high current gain also allows for a larger output current for a given control signal.
The FJN4313RBU is suitable for use in small signal amplification and switching applications. It can be used in a variety of circuits, such as audio amplifiers, switching power supplies, logic level converters, gate drivers, LED display drivers, and many others. Its small manufacturing footprint and low cost make it an ideal choice for mass production.
The working principle of the FJN4313RBU is based on the basic principles of BJT transistors. The emitter-base junction of the transistor is forward biased by applying a voltage to the base terminal. This causes electrons to flow from the emitter terminal to the base terminal, creating an electron-hole pair in the base-emitter junction. As these charges move through the base region, they create an amplified base current. This current is then amplified even more when it reaches the collector terminal. By controlling the amount of current flowing through the transistor, the amount of current flowing through the collector can be controlled, allowing for adjustable gain and switching functions.
The FJN4313RBU is an excellent choice for a variety of electronic applications. Its high current gain, low on-state resistance, and fast switching speed make it ideal for use in small signal amplification, as a general purpose switch, and as a driver for LED displays. Its small size and low cost also make it a great choice for mass production applications.
The specific data is subject to PDF, and the above content is for reference
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