Allicdata Part #: | FJN4312RBU-ND |
Manufacturer Part#: |
FJN4312RBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 300MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | FJN4312RBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Resistor - Base (R1): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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The FJN4312RBU is a single pre-biased transistor that is used in a variety of applications. It is an NPN unit and is designed to operate on direct current (DC) ranging from -65V up to +12V. This makes it suitable for a range of applications, including power supply designs, control amplifiers, and linear tracking systems.
A bipolar junction transistor (BJT) is a type of transistor in which the small currents of the collector region are directly affected by the current through the base region. Unlike some other types of transistors, which are three-terminal devices with a source, a drain, and a gate, BJTs use a collector, a base, and an emitter. The FJN4312RBU uses this configuration.
The FJN4312RBU operates by allowing electrons to flow from the collector to the base when a positive voltage is applied. This type of transistor amplifies the electric current since, for a specific base current, the collector current can be greater. This increased current is long term, meaning that the transistor can maintain this current even after the electric input stops being applied. This is a key factor in many applications requiring reliable, sustained current.
The FJN4312RBU is a particularly useful type of BJT as it is a pre-biased transistor. As a pre-biased unit, this device already has some existing base current so that only minimal voltage needs to be applied in order to trigger the normal mode of operation. The FJN4312RBU also features increased power handling, making it suitable for higher power applications such as power supplies, control amplifier, and linear tracking systems.
In terms of its application field, the FJN4312RBU is commonly used in electrical circuits that require the amplification of electric current. Its pre-biased nature makes it particularly useful, as the voltage requirement for operation tends to be relatively low, allowing for flexible designs. It can also be used in applications that require sustained current, such as power supply designs, control amplifiers and linear tracking systems.
To conclude, the FJN4312RBU is a single, pre-biased transistor that operates using bipolar junction technology. It is suitable for a variety of applications, including power supply designs, control amplifiers, and linear tracking systems. The pre-biased nature of this device and its increased power handling makes it particularly useful in certain areas, such as those requiring sustained current or low-voltage designs.
The specific data is subject to PDF, and the above content is for reference
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