FJN4308RBU Allicdata Electronics
Allicdata Part #:

FJN4308RBU-ND

Manufacturer Part#:

FJN4308RBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 300MW TO92-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: FJN4308RBU datasheetFJN4308RBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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The FJN4308RBU is a single, pre-biased, bipolar junction transistor (BJT). This type of transistor is characterized by its two p- and n-type semiconductor layers, separated by a thin, insulating layer. FJN4308RBU is designed for general purpose amplification and switching applications.

The FJN4308RBU bipolar junction transistor has three terminals: collector, base and emitter. The collector is the negative voltage terminal, the base is the control terminal and the emitter is the positive voltage terminal. In an NPN type of BJT, the collector is connected to the positive supply voltage and the emitter is connected to the negative supply voltage.

The working principle of the FJN4308RBU is based on the interaction of two main areas in the device. The first is the depletion region, which is an insulating layer that is established between two different semiconductor materials (p-type and n-type) when bias voltage is applied to the transistor. The second is the injection region, which is an area where electrons are injected from the emitter into the base of the transistor. This injection of electrons creates a conducting path between the collector and the emitter, allowing current to flow from the collector to the emitter.

The FJN4308RBU can be used in a wide range of applications, including audio amplifiers, switching and speed control, RF amplifiers and circuits, oscillators, digital circuits, etc. It can also be employed in power switching and motor control circuits. Additionally, it can be used in analog integrated circuit applications, such as audio drivers, voltage regulators, and temperature controllers.

As the FJN4308RBU is a pre-biased transistor, there is no need to apply external bias voltage to the base terminal in order to activate the transistor. This means that the transistor is already in its active mode, which offers convenience and improved circuit efficiency in many applications. The device can also provide good thermal stability even at high temperatures and high current levels.

In summary, the FJN4308RBU is a single, pre-biased bipolar junction transistor (BJT) designed for general purpose amplification and switching applications. It is a popular choice for a wide range of applications, including audio amplifiers, RF amplifiers and circuits, oscillators, digital circuits, power switching and motor control circuits, and analog integrated circuit applications. Its pre-biased operating structure makes it a convenient and efficient device.

The specific data is subject to PDF, and the above content is for reference

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