| Allicdata Part #: | FJN4310RBU-ND |
| Manufacturer Part#: |
FJN4310RBU |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PREBIAS PNP 300MW TO92-3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: |  FJN4310RBU Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 40V |
| Resistor - Base (R1): | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Frequency - Transition: | 200MHz |
| Power - Max: | 300mW |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package: | TO-92-3 |
Description
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The FJN4310RBU is a special type of transistor, classified as Single, Pre-Biased Bipolar (BJT). It is useful in both digital and analog circuits and is designed to be compatible with a range of power converters and amplifiers. The FJN4310RBU is one of the most commonly used transistors in these applications due to its high level of reliability and long life expectancy. A transistor is a type of active semiconductor device that is used to amplify or switch electronic signals and power. It is composed of three layers of semiconductor material, which are arranged in either a N-P-N or P-N-P configuration, depending on the type of transistor. Transistors can be used in either digital or analog circuits to amplify a signal, switch power, or function as an oscillator. The FJN4310RBU is a type of BJT (Bipolar Junction Transistor), which is a semiconductor device with two distinct junctions, P-type and N-type. The working principle of the FJN4310RBU is based on the fact that the current flowing through the p-type layer is heavier than that flowing through the n-type layer. This is because in order to allow current to flow through the junction, the resistance in the p-type layer must be higher than the resistance in the n-type layer. The FJN4310RBU has two separate bases, the emitter and the collector, allowing the transistor to act as both an amplifier and a switch. The FJN4310RBU has found applications in many fields due to its versatile design. It is commonly used in power converters, amplifiers, digital systems, and a range of other electronic devices. It is also used in medical devices, due to its low power consumption and high reliability. The FJN4310RBU is a very commonly used transistor for these applications, due to its low cost, high reliability, and low operating power consumption. In conclusion, the FJN4310RBU is a Single, Pre-Biased Bipolar (BJT) transistor that is used in a wide range of digital and analog circuits. Its working principle is based on the fact that the current flowing through the p-type layer is heavier than that flowing through the n-type layer. The FJN4310RBU is commonly used in power converters, amplifiers, digital systems, medical devices, and other electronic devices due to its low cost, high reliability, and low operating power consumption.
The specific data is subject to PDF, and the above content is for reference
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