FJN4306RBU Allicdata Electronics
Allicdata Part #:

FJN4306RBU-ND

Manufacturer Part#:

FJN4306RBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 300MW TO92-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: FJN4306RBU datasheetFJN4306RBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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The FJN4306RBU is a single, pre-biased, bipolar junction transistor (BJT). This kind of BJT offers many advantages, such as efficient power transfer, low operating voltage, and ultra-high speed switching, making it suitable for a wide variety of applications. In this article, we will discuss the application field of the FJN4306RBU and its working principle.

Application Field: The FJN4306RBU is ideal for use in high-speed switching applications. Its low operating voltage (9V) makes it suitable for use in battery-powered applications. It is also suitable for use in audio and communication systems, as it is capable of achieving low power consumption and high-level audio performance. In addition, the FJN4306RBU can be used in automotive, industrial, and medical applications, due to its wide operating temperature range (–40 to 150 °C).

Working Principle: The FJN4306RBU is composed of three layers of semiconductor material, which are known as P-type (positive), N-type (negative), and third layer (neutral). The P-type and N-type materials are known as the base and collector, respectively. The third layer, known as the emitter, is connected to the base and collector with two resistors, which are used to control the current flow through the transistor. When these two resistors are connected, the transistor is said to be “on”, allowing current to pass through it. When the resistors are connected in the opposite direction (i.e. “off”), the current flow is blocked.

The FJN4306RBU is a single, pre-biased BJT, meaning that the P-type and N-type materials are connected to the base and collector, respectively, with two resistors. This allows for the biasing of the transistor without having to supply external power. This biasing allows for an “always on” operation, simplifying circuit design and saving power.

The FJN4306RBU is a high-performance transistor that can be used for a variety of applications. Its low operating voltage, wide temperature range, and ultra-high speed switching capabilities make it suitable for battery-powered, automotive, industrial, and medical applications. Furthermore, its single, pre-biased structure simplifies circuit design and enhances power efficiency.

The specific data is subject to PDF, and the above content is for reference

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