Allicdata Part #: | 2SC5754-A-ND |
Manufacturer Part#: |
2SC5754-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | RF TRANSISTOR NPN SOT-343F |
More Detail: | RF Transistor NPN 5V 500mA 20GHz 735mW Surface Mou... |
DataSheet: | 2SC5754-A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Strip |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 5V |
Frequency - Transition: | 20GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 12dB |
Power - Max: | 735mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 100mA, 3V |
Current - Collector (Ic) (Max): | 500mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-343F |
Supplier Device Package: | -- |
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The 2SC5754-A is one of the most popular RF transistors available in the market today. It is a low cost, high speed, high frequency bipolar transistor which is used in a wide range of RF applications, from cell phone transmitters to TV and satellite receivers.
The 2SC5754-A is a NPN bipolar transistor, which is designed for use in both linear and switching applications at high frequencies. It is designed for use in RF power amplifiers such as RF transmitters, RF receivers, and RF oscillators. It is characterized by low capacitance and reverse voltage capability, making it ideal for use in RF applications requiring high switching speeds and high power capabilities.
The 2SC5754-A is capable of operating up to frequencies of 2.5GHz and is suitable for wide bandwidth use, such as in WiMAX applications. It has a very low noise figure and a very low input gate capacitance, which helps reduce the level of noise picked up by the device. The 2SC5754-A also features a high breakdown voltage, which makes it well suited for use in RF power amplifiers.
The transistor is typically used in RF power amplifiers to increase the gain of signals in the frequency range from 400 MHz to 2.5 GHz. It is also used in wideband receivers and oscillators for signal amplification and as a switch for digital circuit switching. The 2SC5754-A has a high gain bandwidth product, making it suitable for applications requiring wide bandwidth signals.
In terms of its working principle, the transistor works by controlling the amount of current that flows from the collector to the emitter. The transistor is biased so the current flowing from the collector to the emitter is limited. When a small electrical signal is applied to the base, current will flow through the base-emitter junction which will cause the current through the collector-emitter junction to increase or decrease. The amount of current flow through the collector-emitter junction determines the gain of the device. The gain of the transistor is determined by the ratio of the collector current to base current, or the hFE value of the device.
The 2SC5754-A transistor is a useful and versatile device which is widely used in RF power applications. Because of its high breakdown voltage and high gain bandwidth product, it is well suited for use in RF power amplifiers and wideband receivers and oscillators. It is also capable of operating at high frequencies, making it an ideal choice for applications requiring a high degree of signal fidelity.
The specific data is subject to PDF, and the above content is for reference
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