MMBT4126LT3G Allicdata Electronics

MMBT4126LT3G Discrete Semiconductor Products

Allicdata Part #:

MMBT4126LT3GOSTR-ND

Manufacturer Part#:

MMBT4126LT3G

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 25V 0.2A SOT23
More Detail: Bipolar (BJT) Transistor PNP 25V 200mA 250MHz 225m...
DataSheet: MMBT4126LT3G datasheetMMBT4126LT3G Datasheet/PDF
Quantity: 10000
10000 +: $ 0.01125
30000 +: $ 0.01012
50000 +: $ 0.00900
100000 +: $ 0.00844
250000 +: $ 0.00750
Stock 10000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Power - Max: 225mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBT4126
Description

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MMBT4126LT3G is a bipolar junction transistor (BJT), which belongs to the Single transistors family. Generally, BJTs are three-terminal devices constructed from two p-n junctions, which can both act as a switch and an amplifier. Because of these characteristics, BJTs are widely used in many electronic applications such as power control circuits, audio amplifiers, and low noise amplifiers. MMBT4126LT3G has the following applications and working principles.

Application

MMBT4126LT3G BJTs are used primarily as a switch in low power control circuits and low noise amplifier circuits. This device is mostly used in IO interface switch and driver applications. It can also be used for audio amplifiers and low power analog circuits. The BJT is well-suited for applications operating under a wide range of temperatures (-55°C to +150°C).

Working Principle

MMBT4126LT3G BJTs use a small amount of current in the base region to control the large amount of current flowing through the emitter-collector region. The base-emitter junction acts as a forward biased diode, which ensures that the base current is concentrated at this junction. The base-collector junction is reverse biased, meaning that current doesn’t flow through it; instead, it blocks current flow. The emitter-collector junction works like a simple switch, with the current controlled by the base current.

The conduction of current through a BJT device can be either in the forward or reverse direction. When the device is biased in the forward direction, it acts as an amplifier, with the input signal applied to the base region and the amplified signal output from the collector region. When it is biased in the reverse direction, it acts as a switch, with the input signal applied to the base region and the collector region serving as the output.

MMBT4126LT3G BJTs have a low voltage drop, making them efficient and suitable for low noise applications. They can also be used in low power control circuits, as they can switch on and off quickly. Additionally, these devices have a high breakdown voltage, so they can be used in high voltage applications.

Conclusion

MMBT4126LT3G BJTs are widely used with its ability to operate as either an amplifier or switch. It has a low voltage drop, high breakdown voltage, and wide temperature range, making it suitable for various applications. It can be used in IO interface switch and driver applications, audio amplifiers, and low noise amplifiers, among others. MMBT4126LT3G BJTs can both act as a switch and an amplifier, controlled by a small current of the base region.

The specific data is subject to PDF, and the above content is for reference

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