Allicdata Part #: | BFR93AW,135-ND |
Manufacturer Part#: |
BFR93AW,135 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 12V 35MA 5GHZ SOT323 |
More Detail: | RF Transistor NPN 12V 35mA 5GHz 300mW Surface Moun... |
DataSheet: | BFR93AW,135 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 5GHz |
Noise Figure (dB Typ @ f): | 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz |
Gain: | -- |
Power - Max: | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 30mA, 5V |
Current - Collector (Ic) (Max): | 35mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Base Part Number: | BFR93 |
Description
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Introduction to BFR93AW,135
The BFR93AW,135 is a high-frequency npn BJT that can be used as an amplifier or a mixer in many RF applications. It has a high transition frequency (fT) of 250 MHz and a low noise figure of 1.2 dB. It can also be used for variable gain control.Application field of BFR93AW,135
The BFR93AW,135 can be used for many RF applications, such as amplifiers, mixers, voltage-controlled attenuators, and variable gain amplifiers. It is also suitable for low noise applications due to its low noise figure. Its high transition frequency makes it suitable for use in high frequency circuits.Working Principle of BFR93AW,135
The BFR93AW,135 is a npn bipolar junction transistor (BJT). It has three terminals – the emitter, base, and collector. The emitter is the input terminal, and signals enter it. The base is the control terminal, and its voltage controls the current flowing through the collector. An increase in the base voltage increases the current flow, while a decrease in voltage reduces it. This transistor works on action of the base-emitter-collector region. The base electrode allows the flow of minority carriers from the emitter to the collector. The majority carriers flow from the collector to the emitter, and the majority carriers are trapped by the base-emitter-collector region. This creates an amplification of input signal at the output.The BFR93AW,135 also has an internal capacitance, which is a function of the base bias. This capacitance helps in providing low distortion and higher frequency response in signal circuits.Conclusion
The BFR93AW,135 is a high-frequency, low-noise npn BJT that can be used for many RF applications. It has a high transition frequency and a low noise figure, making it suitable for low noise applications. It can also be used for variable gain control due to its internal capacitance. The BFR93AW,135 is a versatile and useful component that can be used in many RF circuits.The specific data is subject to PDF, and the above content is for reference
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