DMC5610N0R Allicdata Electronics
Allicdata Part #:

DMC5610N0R-ND

Manufacturer Part#:

DMC5610N0R

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS 2NPN PREBIAS 0.15W SMINI5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: DMC5610N0R datasheetDMC5610N0R Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05411
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: --
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Supplier Device Package: SMini5-F3-B
Base Part Number: DMC5610
Description

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The DMC5610N0R is a pre-biased transistor array. This type of transistor is beneficial to the voltage regulator and other applications that require high-current levels. Overall, this type of transistor is extremely versatile due to its combination of features, efficiency, and constructed material.

In terms of its application field, the DMC5610N0R is used in systems that require high-current levels, such as high-transistor density applications, power distribution, and voltage regulator solutions. This specific transistor array is beneficial for high-transistor density operations, as it contains 16 transistors, allowing for greater power distribution and more uniform current levels. The transistors are also pre-biased, meaning that they can handle a larger load compared to an un-biased transistor.

When it comes to the working principle of the DMC5610N0R, it operates using a Bipolar Junction Transistor (BJT) design. This means that it has two p-n junctions, which allow current to flow in alternating directions. The BJT design is advantageous in many respects, such as greater efficiency and higher current levels. The transistors are also constructed out of a combination of metal and silicon, which makes them robust and capable of handling larger loads.

The DMC5610N0R is also capable of handling high voltage levels, up to 100 volts. Additionally, it features a low forward voltage drop and offers a wide range of operating temperature. As a result, the overall efficiency of the design is increased and it can operate in harsher environments.

In addition to these features, the DMC5610N0R is also production tested and has industry grade guarantees. The device also comes with an integrated thermal shutdown circuit, as well as an on/off control pin, allowing for better regulation of the current.

In conclusion, the DMC5610N0R is an excellent transistor array that is ideal for applications such as high-transistor density operations, power distribution, and voltage regulator solutions. It is a pre-biased device, which translates to greater levels of power distribution and robustness. Additionally, the BJT design and integrated thermal shutdown circuit result in greater overall efficiency. The DMC5610N0R is capable of handling loads up to 100 volts, and has a wide operating temperature range, allowing it to be used in harsher environments. With these features, and the industry grade guarantees, this transistor array is an excellent choice for any system that requires robust operation and higher current levels.

The specific data is subject to PDF, and the above content is for reference

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