Allicdata Part #: | PDTC144WS,126-ND |
Manufacturer Part#: |
PDTC144WS,126 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PREBIAS NPN 500MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTC144WS,126 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | PDTC144 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 500mW |
Mounting Type: | Through Hole |
Description
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PDTC144WS,126 is a single transistor type, which belongs to the transistor family of Pre-Biased bipolar Junction Transistor (BJT). Pre-Biased BJT are transistors that are designed to operate in both switching and continuous conduction mode, while still providing a regulated low current output. In other words, they are designed to provide a more stable current/voltage output than a typical BJT.The PDTC144WS,126 is a PNP type transistor, with an emitter collector voltage rating of 25V and a collector current rating of 500mA. It has a low current gain of 70 and its power dissipation is roughly 1.4W maximum. The collector to emitter saturation voltage is around 0.5V, which makes the device suitable for low current applications. The PDTC144WS,126 can be used in many types of electronic circuits, from analog to digital and from power to logic, for loads up to 500mA. Common applications for this type of transistor include motor control, power switching, voltage regulation and high speed switching. The principle of operation of the PNP type transistor is similar to that of the NPN transistor. The P-type material forms the majority carriers of electrons which are injected at the source region of the transistor. The electrons then move through the base region and recombine with the holes, creating a junction between the emitter and the collector. When a current is applied to the emitter, the collector current is increased due to the base current. This is known as the operating principle of the bipolar junction transistor. Pre-biased transistors offer several advantages over traditional BJTs. They tend to have higher current gain and lower saturation voltage. They also offer better thermal stability and more consistent performance. Lastly, they offer better performance under transient conditions, making them more suitable for use in applications such as motor control and power switching. Overall, the PDTC144WS,126 is a great transistor for use in many types of electronic circuits. Its high-current rating and low voltage drop make it suitable for many applications, from power switching to motor control. Its pre-biased design adds additional stability and increased performance, making it an ideal choice for high speed switching applications.The specific data is subject to PDF, and the above content is for reference
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