Allicdata Part #: | NSM11156DW6T1G-ND |
Manufacturer Part#: |
NSM11156DW6T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP PREBIAS/PNP 0.23W SC88 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Bias... |
DataSheet: | NSM11156DW6T1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 1 PNP Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V, 65V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V / 220 @ 2mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 230mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
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NSM11156DW6T1G technology is a type of prebiased transistors array. It features a three terminal architecture which means it can both be employed as a standalone device or as a part of larger circuits. This device is ideally suited for use in power amplification applications.
NSM11156DW6T1G is a transformer-based bipolar junction transistor (BJT) array which features a totem-pole output stage. This configuration allows transistors to be connected in parallel to improve switching and gate control. As a result, it is able to operate at higher speeds with greater efficiency and greater switching accuracy.
The NSM11156DW6T1G has a dual emitter structure which is designed to facilitate simultaneous conduction of both the emitter-base junctions. The dual emitter also enables the device to be used as a prebiased configuration where the emitter-base junction of one transistor is biased with a negative voltage while the other is biased with a positive voltage. This arrangement allows the device to switch quickly between states, greatly reducing the effects of parasitic capacitance.
The pre-biased structure also enables the NSM11156DW6T1G to achieve the full gain of the amplifier, improving the device’s efficiency. Furthermore, the structure is capable of providing both linear and nonlinear amplification and can be used for both AC and DC applications. Finally, the device is compatible with most switching applications and offers high current density.
In terms of working principles, the NSM11156DW6T1G uses two transistors to provide a complementary output stage. This device is controlled by an external clock and when a pulse is provided to the transistor’s base, the device is switched to the on state. The output voltage is then fed to the load. When the pulse is removed, the device is switched back to the off state, the output voltage is discharged, and the circuit is set back to the off state. This cycle ensures that the device has a high degree of accuracy and stability.
In terms of applications, the NSM11156DW6T1G can be used in a variety of settings. This technology is ideal for use in audio systems, as well as industrial, automotive, and consumer applications. The device is capable of providing high-power output, and it can be used for both AC and DC operation. Additionally, this device is compatible with most switching applications, offering high current density.
Overall, the NSM11156DW6T1G is a prebiased transistor array featuring impressive speed, accuracy, and efficiency. Its durability and reasonable cost have made it a popular choice for applications in audio systems, industrial, automotive, and consumer applications. Its dual emitter structure facilitates simultaneous conduction of both emitter-base junctions and its pre-biased configuration greatly reduces the effects of parasitic capacitance. This device showcases impressive power handling capabilities and is used for both AC and DC operation.
The specific data is subject to PDF, and the above content is for reference
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