Allicdata Part #: | 785-1580-2-ND |
Manufacturer Part#: |
AON6926 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET 2N-CH 30V 11A/12A 8DFN |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 30V 11A, 12... |
DataSheet: | AON6926 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 11A, 12A |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1380pF @ 15V |
Power - Max: | 1.9W, 2.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-DFN (5x6) |
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AON6926 is a low power, dual-channel, single-bit input, high voltage, n-channel insulated gate bipolar transistors (IGBT) array. It can reduce the power loss of the device by reducing the switching power, which makes it suitable for applications in power electronics and small motors. This device is composed of two independent, high voltage, HVIGBTs fabricated in the same small package.
The AON6926 provides efficient performance in a variety of power electronic applications, including power converters, power supplies, motor controllers, and motor drives. Using an IGBT as an active switch, the device has a higher switching speed and smaller size compared to a traditional power MOSFET. This device also has a simple gate control circuitry, allowing the user to easily control the switching transition of the IGBT.
The working principle of AON6926 is based on the non-rectifying junction of IGBTs. HVIGBTs are also suitable for working with higher voltages up to 450V. An insulated gate bipolar transistor is typically driven with a voltage source, which gives the device a higher degree of drive capability. During forward conduction, the higher voltage at the collector-gate junction compared to the gate-emitter voltage increases the current gain.
When the voltage at the gate is increased above the turn-on threshold, electrons will flow through the channel and start to build up an electric current in the device. This current flow will continue until the voltage at the gate drops below the turn-off threshold. During the turn-off transition, the voltage at the gate falls below the turn-off threshold and the current will reduce to zero, allowing the device to turn off.
The AON6926 is designed for various applications, from high-power to low-power and from dc-to-dc converters to ac-to-dc applications. It has a high degree of flexibility in driving the input voltage up to 450V and a low power consumption. Due to its high electrical characteristics, it is suitable for applications which require a constant and regular switching pattern. It is also suitable for applications which require a high switching frequency, such as motor control, power supplies and UPS systems.
In conclusion, AON6926 is a high voltage, single-bit input, n-channel insulated gate bipolar transistor array which provides efficient performance in a variety of power electronic applications. It has a high degree of flexibility in driving the input voltage up to 450V, and a low power consumption. This device can reduce the power loss of the device by reducing the switching power, which makes it suitable for applications in power electronics and small motors.
The specific data is subject to PDF, and the above content is for reference
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