SP8K2FU6TB Allicdata Electronics
Allicdata Part #:

SP8K2FU6TB-ND

Manufacturer Part#:

SP8K2FU6TB

Price: $ 0.44
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET 2N-CH 30V 6A 8SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 6A 2W Surface ...
DataSheet: SP8K2FU6TB datasheetSP8K2FU6TB Datasheet/PDF
Quantity: 1000
2500 +: $ 0.40572
Stock 1000Can Ship Immediately
$ 0.44
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Base Part Number: *K2
Description

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SP8K2FU6TB is a type of FET array with a particular application and working principle. FET arrays are semiconductor devices that consist of several Field Effect Transistors (FETs) connected together. They are used to provide a wide variety of functions, including digital logic, power control, and signal buffering. Depending on the FET configuration, they can also provide linear amplification of signals or serve as analog gain blocks.

The SP8K2FU6TB is a dual-channel FET/MOSFET array that provides a combination of N-Channel MOSFET and N-Channel FET transistors. This particular array is designed for use in high-voltage applications, such as for automotive and industrial applications requiring isolation and rail to rail protection. The SP8K2FU6TB is a low-noise, low on-resistance device that can be used for multiple voltage input ranges.

The SP8K2FU6TB is a N-Channel FET array that includes two independent N-Channel MOSFETs. Each of the MOSFETs has its own source, gate and drain connections, enabling independent operation and control of each of the channels. The two MOSFETs are connected in an integrated circuitry and each of them is driven independently. Each of the transistors has its own drain and gate connection which enables independent control over each of the channels.

The working principle of the SP8K2FU6TB is similar to that of other FETs and MOSFETs. It works on the principle of capacitance in which the current is switched or modulated by the passage of a small electric field. The FET array operates with different voltage levels for each of the channels and is an ideal solution for applications requiring high-voltage isolation and protection.

The SP8K2FU6TB can be used in a wide range of applications from automotive, industrial and more. It can be used for voltage regulation, current sensing, solid state switch, gate switch and more. It is also capable of providing rail to rail protection and isolating high voltages with precise accuracy. The device has a low on-resistance and low power consumption which makes it ideal for use in automotive, industrial and other high-voltage applications.

The SP8K2FU6TB is a versatile FET/MOSFET array that provides high performance in a variety of applications. Its low on-resistance and precise accuracy makes it an ideal solution for applications requiring high-voltage isolation and protection. It is an ideal solution for automotive, industrial and other applications requiring a high-performance FET/MOSFET solution.

The specific data is subject to PDF, and the above content is for reference

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